MOSFET SMD Type N-Channel SMPS Power MOSFET KDB15N50(FDB15N50) Features TO-263 Unit: mm +0.1 1.27-0.1 Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt +0.1 1.27-0.1 +0.2 4.57-0.2 Ruggedness Reduced Miller Capacitance and Low Input Capacitance 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Reduced rDS(ON) 0.1max +0.1 1.27-0.1 +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 5.08 +0.2 2.54-0.2 +0.2 5.28-0.2 Improved Switching Speed with Low EMI 1 Gate 0.4 +0.1 -0.1 +0.2 -0.2 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current TC=25 Drain current-pulsed Power dissipation ID Idp PD 15 A 60 A 300 W 2 Derate above 25 Unit Thermal Resistance Junction to Ambient RèJA 62 Channel temperature Tch 175 Storage temperature Tstg -55 to +175 W/ /W www.kexin.com.cn 1 MOSFET SMD Type KDB15N50(FDB15N50) Electrical Characteristics Ta = 25 Parameter Testconditons Min Typ Max 500 VDSS ID=250ìA Drain cut-off current IDSS VDS=500V,VGS=0,TC=25 25 Gate leakage current IGSS VGS= 30V 100 VGS=0V Gate threshold voltage VGS(th) VDS = VGS, ID = 250ìA Drain to source on-state resistance RDS(on) VGS=10V,ID=7.5A Output capacitance Coss Crss gfs VDS=25V,VGS=0,f=1MHZ VDD = 10V, ID = 7.5A A nA 3.4 4.0 V 0.33 0.38 Ù 1850 Ciss Reverse transfer capacitance Forward Transconductance 2.0 Unit V Drain to source breakdown voltage Input capacitance pF 230 pF 16 pF 10 S Qg(TOT) VGS = 10V, 33 41 nC Gate to Source Gate Charge Qgs VDS = 400V, 7.2 10 nC Gate to Drain "Miller" Charge Qgd ID = 15A 12 16 nC Turn-on delay time ton Rise time tr Turn-off delay time toff Fall time tf Reverse Recovery Time trr ISD = 15A, diSD/dt = 100A/ìs 470 730 ns Reverse Recovered Charge QRR ISD = 15A, diSD/dt = 100A/ìs 5 6.6 ìC Continuous Source Current IS 15 A Pulsed Source Current1 ISM 60 A Total Gate Charge at 10V 2 Symbol www.kexin.com.cn ID=15A,RG=6.2 ,VDD=250V,RD=17Ù 9 ns 5.4 ns 26 ns 5 ns