KEXIN KDB15N50

MOSFET
SMD Type
N-Channel SMPS Power MOSFET
KDB15N50(FDB15N50)
Features
TO-263
Unit: mm
+0.1
1.27-0.1
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and High Reapplied dv/dt
+0.1
1.27-0.1
+0.2
4.57-0.2
Ruggedness
Reduced Miller Capacitance and Low Input Capacitance
5.60
+0.2
15.25-0.2
+0.2
8.7-0.2
Reduced rDS(ON)
0.1max
+0.1
1.27-0.1
+0.2
2.54-0.2
+0.1
0.81-0.1
2.54
5.08
+0.2
2.54-0.2
+0.2
5.28-0.2
Improved Switching Speed with Low EMI
1 Gate
0.4
+0.1
-0.1
+0.2
-0.2
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
30
V
Drain current
TC=25
Drain current-pulsed
Power dissipation
ID
Idp
PD
15
A
60
A
300
W
2
Derate above 25
Unit
Thermal Resistance Junction to Ambient
RèJA
62
Channel temperature
Tch
175
Storage temperature
Tstg
-55 to +175
W/
/W
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1
MOSFET
SMD Type
KDB15N50(FDB15N50)
Electrical Characteristics Ta = 25
Parameter
Testconditons
Min
Typ
Max
500
VDSS
ID=250ìA
Drain cut-off current
IDSS
VDS=500V,VGS=0,TC=25
25
Gate leakage current
IGSS
VGS= 30V
100
VGS=0V
Gate threshold voltage
VGS(th)
VDS = VGS, ID = 250ìA
Drain to source on-state resistance
RDS(on)
VGS=10V,ID=7.5A
Output capacitance
Coss
Crss
gfs
VDS=25V,VGS=0,f=1MHZ
VDD = 10V, ID = 7.5A
A
nA
3.4
4.0
V
0.33
0.38
Ù
1850
Ciss
Reverse transfer capacitance
Forward Transconductance
2.0
Unit
V
Drain to source breakdown voltage
Input capacitance
pF
230
pF
16
pF
10
S
Qg(TOT)
VGS = 10V,
33
41
nC
Gate to Source Gate Charge
Qgs
VDS = 400V,
7.2
10
nC
Gate to Drain "Miller" Charge
Qgd
ID = 15A
12
16
nC
Turn-on delay time
ton
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Reverse Recovery Time
trr
ISD = 15A, diSD/dt = 100A/ìs
470
730
ns
Reverse Recovered Charge
QRR
ISD = 15A, diSD/dt = 100A/ìs
5
6.6
ìC
Continuous Source Current
IS
15
A
Pulsed Source Current1
ISM
60
A
Total Gate Charge at 10V
2
Symbol
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ID=15A,RG=6.2 ,VDD=250V,RD=17Ù
9
ns
5.4
ns
26
ns
5
ns