Transistors IC SMD Type Dual N & P-Channel PowerTrench MOSFET KDS8958 Features N-Channel 7.0 A, 30 V RDS(ON) = 0.028 RDS(ON) = 0.040 @ VGS = 10 V @ VGS =4.5V P-Channel -5 A, -30 V RDS(ON) = 0.052 RDS(ON) = 0.080 @ VGS =- 10 V @ VGS =-4.5V Fast switching speed High power and handling capability in a widely used surface mount package Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage Parameter VDSS 30 30 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation PD 7 -5 A 20 -20 A 2 PD 1 TJ, TSTG -55 to 150 W W 0.9 (Note 1c) Operating and Storage Temperature V 1.6 Power Dissipation for Single Operation (Note 1a) (Note 1b) 20 20 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case R JC 40 /W (Note 1) www.kexin.com.cn 1 Transistors IC SMD Type KDS8958 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A, Referenced to 25 Min N-Ch 30 P-Ch -30 25 P-Ch -22 N-Ch 1 P-Ch -1 VGS = 20V, VDS = 0 V N-Ch 100 VGS = 20 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A A, Referenced to 25 A, Referenced to 25 N-Ch 1 1.6 3 P-Ch -1 -1.7 -3 N-Ch -4.3 P-Ch 4 Static Drain-Source On-Resistance RDS(on) 28 32 42 VGS = 4.5 V, ID =6 A 27 40 VGS = -10 V, ID =-5 A 41 52 VGS = -10 V, ID =-5 A,TJ = 125 N-Ch P-Ch VGS = -4.5 V, ID =-4A On-State Drain Current Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge 2 ID(on) www.kexin.com.cn Qgd 58 78 58 80 VGS = 10 V, VDS = 5V N-Ch 20 VGS = -10 V, VDS = -5V P-Ch -20 VDS = 5V, ID = 7A N-Ch 19 VDS = -5V, ID = -5A P-Ch 11 N-Channel N-Ch 789 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 690 N-Ch 173 P-Ch 306 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 66 P-Ch 77 pF pF N-Ch 6 12 P-Ch 6.7 13.4 N-Ch 10 18 P-Ch 9.7 19.4 P-Channel N-Ch 18 29 VDD = -10 V, ID = -1 A, P-Ch 19.8 35.6 (Note 2) m pF VDD = 10 V, ID = 1 A, VGS = -10 V, RGEN = 6 V S N-Channel (Note 2) nA A P-Channel VGS = 10 V, RGEN = 6 A mV/ 21 VGS = 10 V, ID = 7 A,TJ = 125 Unit mV/ VDS = -24 V, VGS = 0 V ID = -250 RDS(on) Max V N-Ch VGS = 10 V, ID =7A Static Drain-Source On-Resistance Typ VDS = 24V, VGS = 0 V ID = 250 Gate Threshold Voltage Temperature Coefficient A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol N-Ch 5 12 P-Ch 12.3 22.2 N-Channel N-Ch 16 26 VDS =15V,ID=7A,VGS=10V(Note 2) P-Ch 14 23 N-Ch 2.5 P-Channel P-Ch 2.2 VDS=-15V,ID=-5A,VGS=-10V(Note 2) N-Ch 2.1 P-Ch 1.9 ns ns ns ns nC nC nC Transistors IC SMD Type KDS8958 Electrical Characteristics Ta = 25 Parameter Symbol Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD Testconditons Min Typ Max N-Ch 1.3 P-Ch -1.3 VGS = 0 V, IS = 1.3A (Not 2) N-Ch 0.74 1.2 VGS = 0 V, IS = -1.3A (Not 2) P-Ch -0.76 -1.2 Unit A V www.kexin.com.cn 3