KEXIN KDW258P

IC
IC
SMD Type
P-Channel 1.8V Specified PowerTrench MOSFET
KDW258P
TSSOP-8
Features
Unit: mm
-9 A, -12 V. RDS(ON) = 11m
@ VGS = -4.5 V
RDS(ON) = 14m
@ VGS =-2.5V
RDS(ON) = 20m
@ VGS =-1.8V
Rds ratings for use with 1.8 V logic
High performance trench technology for extremely low RDS(ON)
1,5,8: Drain
Low gate charge
2,3,6,7: Source
Low profile TSSOP-8 package
4: Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to Source Voltage
VDSS
-12
V
Gate to Source Voltage
VGS
8
V
-9
A
Drain Current Pulsed
-50
A
Power Dissipation for Single Operation (Note 1a)
1.3
Drain Current Continuous (Note 1)
ID
PD
Power Dissipation for Single Operation (Note 1b)
Operating and Storage Temperature
Unit
W
0.6
TJ, TSTG
-55 to 150
Thermal Resistance Junction to Ambient (Note 1a)
R
JA
87
/W
Thermal Resistance Junction to Ambient (Note 1b)
R
JA
114
/W
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1
IC
IC
SMD Type
KDW258P
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Breakdown Voltage Temperature Coefficient
Testconditons
VGS = 0 V, ID = -250
ID = -250
IDSS
VDS = -10 V, VGS = 0 V
Gate-Body Leakage, Forward
IGSSF
VGS = 8V, VDS = 0 V
Gate-Body Leakage, Reverse
IGSSR
VGS = -8 V, VDS = 0 V
Gate Threshold Voltage(Not 2)
VGS(th)
VDS = VGS, ID = -250
Static Drain-Source On-Resistance(Not 2)
ID = -250
RDS(on)
ID(on)
Forward Transconductance
Unit
V
mV/
-1
A
-0.4
-0.6
100
nA
-100
nA
-1.5
V
3
A, Referenced to 25
A
mV/
VGS = -4.5 V, ID =-9 A
8.6
11
VGS = -2.5 V, ID = -8 A
10.6
14
VGS = -1.8 V, ID = -6.5 A
13.8
20
11.2
14
m
VGS = -4.5 V, VDS = -5V
VDS = -5 V, ID = -9A
-50
A
50
S
5049
pF
1943
pF
pF
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1226
Turn-On Delay Time
td(on)
17
31
ns
Turn-On Rise Time
tr
23
37
ns
Turn-Off Delay Time
td(off)
201
322
ns
VDS = -5 V, VGS = 0 V,f = 1.0 MHz
VDD = -6 V, ID = -1 A,VGS = -4.5 V, RGEN
= 6 (Note 2)
Turn-Off Fall Time
tf
148
237
ns
Total Gate Charge
Qg
61
73
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Maximum Continuous Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage
Marking
Marking
2
gFS
Max
-3
VGS = -4.5 V, ID =-9 A,TJ = 125
On-State Drain Current
Typ
-12
A, Referenced to 25
Zero Gate Voltage Drain Current
Gate Threshold Voltage Temperature
Coefficient(Not 2)
A
Min
258P
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VDS = -6 V, ID =-9 A,VGS=-4.5V(Note 2)
8
nC
16
nC
IS
VSD
VGS = 0 V, IS = -1.25A (Not 2)
-0.6
-1.25
A
-1.2
V