IC IC SMD Type P-Channel 1.8V Specified PowerTrench MOSFET KDW258P TSSOP-8 Features Unit: mm -9 A, -12 V. RDS(ON) = 11m @ VGS = -4.5 V RDS(ON) = 14m @ VGS =-2.5V RDS(ON) = 20m @ VGS =-1.8V Rds ratings for use with 1.8 V logic High performance trench technology for extremely low RDS(ON) 1,5,8: Drain Low gate charge 2,3,6,7: Source Low profile TSSOP-8 package 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to Source Voltage VDSS -12 V Gate to Source Voltage VGS 8 V -9 A Drain Current Pulsed -50 A Power Dissipation for Single Operation (Note 1a) 1.3 Drain Current Continuous (Note 1) ID PD Power Dissipation for Single Operation (Note 1b) Operating and Storage Temperature Unit W 0.6 TJ, TSTG -55 to 150 Thermal Resistance Junction to Ambient (Note 1a) R JA 87 /W Thermal Resistance Junction to Ambient (Note 1b) R JA 114 /W www.kexin.com.cn 1 IC IC SMD Type KDW258P Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Breakdown Voltage Temperature Coefficient Testconditons VGS = 0 V, ID = -250 ID = -250 IDSS VDS = -10 V, VGS = 0 V Gate-Body Leakage, Forward IGSSF VGS = 8V, VDS = 0 V Gate-Body Leakage, Reverse IGSSR VGS = -8 V, VDS = 0 V Gate Threshold Voltage(Not 2) VGS(th) VDS = VGS, ID = -250 Static Drain-Source On-Resistance(Not 2) ID = -250 RDS(on) ID(on) Forward Transconductance Unit V mV/ -1 A -0.4 -0.6 100 nA -100 nA -1.5 V 3 A, Referenced to 25 A mV/ VGS = -4.5 V, ID =-9 A 8.6 11 VGS = -2.5 V, ID = -8 A 10.6 14 VGS = -1.8 V, ID = -6.5 A 13.8 20 11.2 14 m VGS = -4.5 V, VDS = -5V VDS = -5 V, ID = -9A -50 A 50 S 5049 pF 1943 pF pF Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1226 Turn-On Delay Time td(on) 17 31 ns Turn-On Rise Time tr 23 37 ns Turn-Off Delay Time td(off) 201 322 ns VDS = -5 V, VGS = 0 V,f = 1.0 MHz VDD = -6 V, ID = -1 A,VGS = -4.5 V, RGEN = 6 (Note 2) Turn-Off Fall Time tf 148 237 ns Total Gate Charge Qg 61 73 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Marking Marking 2 gFS Max -3 VGS = -4.5 V, ID =-9 A,TJ = 125 On-State Drain Current Typ -12 A, Referenced to 25 Zero Gate Voltage Drain Current Gate Threshold Voltage Temperature Coefficient(Not 2) A Min 258P www.kexin.com.cn VDS = -6 V, ID =-9 A,VGS=-4.5V(Note 2) 8 nC 16 nC IS VSD VGS = 0 V, IS = -1.25A (Not 2) -0.6 -1.25 A -1.2 V