Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Drain to Source Voltage VDSS 30 -30 Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed PD (Note 1b) PD 20 2.9 A 10 A Operating and Storage Temperature TJ, TSTG (Note 1) Thermal Resistance Junction to Ambient (Note 1a) 2 1 W 0.9 (Note 1c) Thermal Resistance Junction to Case 20 3.7 1.6 Power Dissipation for Single Operation (Note 1a) V V 15 Power Dissipation for Dual Operation Unit -55 to 150 R JC 40 /W R JA 78 /W www.kexin.com.cn 1 Transistors IC SMD Type KDS9952A Electrical Characteristics Ta = 25 Parameter Drain–Source Breakdown Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V,TJ = 55 VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V,TJ = 55 Gate-Body Leakage, Forward IGSSF Gate-Body Leakage, Reverse IGSSR Gate Threshold Voltage VGS(th) VGS = 20 V, VDS = 0 V RDS(on) Min N-Ch 30 P-Ch -30 VGS = -20 V, VDS = 0 V A VDS = VGS, ID = 250 A,TJ = 125 VDS = VGS, ID = -250 A 25 -2 P-Ch VDS = VGS, ID = -250 A,TJ = 125 P-Ch -25 1 Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 2 tf Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain Charge Qgd www.kexin.com.cn 1.7 nA -100 nA 2.8 0.7 1.2 2.2 -1 -1.6 -2.8 -0.85 -1.25 -2.5 0.06 0.08 VGS = 10 V, ID = 1.0 A,TJ = 125 0.08 0.13 0.08 0.11 N-Ch VGS = 4.5 V, ID = 0.5 A,TJ = 125 0.11 0.18 VGS =-10 V, ID =-1.0 A 0.11 0.13 0.15 0.21 P-Ch VGS = -4.5 V, ID =- 0.5 A,TJ = 125 ID(on) 0.17 0.2 0.24 0.32 VGS = 10 V, VDS = 5 V N-Ch 15 VGS = -10 V, VDS = -5 V P-Ch -10 VDS = 15 V, ID = 3.7 A N-Ch 6 VDS = -15 V, ID = -2.9 A P-Ch 4 N-Channel N-Ch 320 VDS = 10 V, VGS = 0 V,f = 1.0 MHz P-Ch 350 N-Ch 225 P-Channel P-Ch 260 VDS = -10 V, VGS = 0 V,f = 1.0 MHz N-Ch 85 P-Ch 100 N-Channel N-Ch 10 15 VDD = 10 V, ID = 1 A P-Ch 9 40 S pF pF pF 13 20 P-Ch 21 40 P-Channel N-Ch 21 50 VDD = -10 V, ID = -1 A P-Ch 21 90 N-Ch 5 50 P-Ch 8 50 N-Channel N-Ch 9.5 27 VDS = 10 V, ID = 3.7 A,VGS = 10 V P-Ch 10 25 VGS = -10 V, RGEN = 6 (Note 2) (Note 2) V A N-Ch VGS = 10 V, RGEN = 6 A 100 VGS = 10 V, ID = 1.0 A VGS =-10 V, ID =-1.0 A,TJ = 125 Unit 2 N-Ch N-Ch Max V ALL VDS = VGS, ID = 250 VGS = -4.5 V, ID =- 0.5 A On–State Drain Current Typ ALL VGS = 4.5 V, ID = 0.5 A Static Drain-Source On-Resistance Type N-Ch 1.5 P-Channel P-Ch 1.6 VDS = -10 V, ID = -2.9 A,VGS = -10 V N-Ch 3.3 P-Ch 3.4 ns ns ns ns nC nC nC Transistors IC SMD Type KDS9952A Electrical Characteristics Ta = 25 Parameter Symbol Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage Reverse Recovery Time VSD trr Testconditons Type Min Typ Max N-Ch 1.2 P-Ch -1.2 VGS = 0 V, IS = 1.25 A (Note 2) N-Ch 0.8 1.3 VGS = 0 V, IS =-1.25 A (Note 2) P-Ch -0.8 -1.3 VGS=0 V, IF=1.25 A,dIF/dt=100A/ VGS=0 V, IF=-1.25 A,dIF/dt=100A/ s s N-Ch 75 P-Ch 100 Unit A V ns www.kexin.com.cn 3