Transistors IC IC SMD Type Product specification KDS4501H Features N-Channel 9.3 A, 30 V RDS(ON) = 18m RDS(ON) = 23m @ VGS = 10 V @ VGS =4.5V P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Drain to Source Voltage VDSS 30 -20 V Gate to Source Voltage VGS 8 V -5.6 A -20 A Drain Current Continuous (Note 1a) ID Drain Current Pulsed (Note 1b) 2.5 PD TJ, TSTG Thermal Resistance Junction to Ambient (Note 1a) (Note 1) 1.2 W 1 (Note 1c) Operating and Storage Temperature http://www.twtysemi.com 9.3 20 Power Dissipation for Single Operation (Note 1a) Thermal Resistance Junction to Case 20 Unit R R -55 to 150 JA 50 /W JC 25 /W [email protected] 4008-318-123 1 of 3 Transistors IC IC SMD Type Product specification KDS4501H Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol A, Referenced to 25 30 P-Ch -20 Typ N-Ch 24 P-Ch -13 N-Ch 1 P-Ch -1 VGS = 20V, VDS = 0 V N-Ch 100 VGS = 8 V, VDS = 0 V P-Ch 100 ID = 250 ID = -250 Static Drain-Source On-Resistance RDS(on) RDS(on) A A A, Referenced to 25 A, Referenced to 25 N-Ch 1 1.6 3 P-Ch -0.4 -0.7 -1.5 N-Ch -4 P-Ch 3 14 N-Ch 29 17 23 VGS = -4.5 V, ID =-5.6 A 36 46 P-Ch ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge N-Ch 20 P-Ch -20 VDS = 5V, ID = 9.3A N-Ch 28 VDS = 5V, ID = -5.6A P-Ch 16 N-Ch 1958 P-Ch 1312 N-Ch 424 P-Ch 240 N-Ch 182 P-Ch 106 http://www.twtysemi.com pF pF pF N-Ch 15 27 P-Ch 15 27 N-Ch 5 10 P-Ch 15 27 (Note 2) P-Channel N-Ch 38 61 VDD = -10 V, ID = -1 A, P-Ch 40 64 N-Ch 10 20 P-Ch 25 40 N-Channel N-Ch 17 27 VDS =15V,ID=9.3A,VGS=4.5V(Note 2) P-Ch 13 21 N-Ch 4 P-Channel P-Ch 2.5 VDS=-15V,ID=-2.4A,VGS=-4.5V(Note 2) N-Ch 5 P-Ch 2.0 VGS = -4.5 V, RGEN = 6 (Note 2) [email protected] m S VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 V A N-Channel Qgs Qgd 80 63 VGS = -4.5 V, VDS = -5V VDS = 10 V, VGS = 0 V,f = 1.0 MHz Reverse Transfer Capacitance 49 47 VGS = 10 V, VDS = 5V nA 18 VGS = 4.5 V, ID =7.6 A VGS = -4.5 V, ID =-5.6 A,TJ = 125 A mV/ 21 VGS = 10 V, ID = 9.3 A,TJ = 125 VGS = -2.5 V, ID =-5.0A On-State Drain Current mV/ VDS = -16 V, VGS = 0 V VDS = VGS, ID = 250 Unit V VGS = 10 V, ID =9.3A Static Drain-Source On-Resistance Max VDS = 24V, VGS = 0 V VDS = VGS, ID = -250 Gate Threshold Voltage Temperature Coefficient Min N-Ch 4008-318-123 ns ns ns ns nC nC nC 2 of 3 Transistors IC IC SMD Type Product specification KDS4501H Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD http://www.twtysemi.com Testconditons Symbol Min Typ Max N-Ch 2.1 P-Ch -2.1 VGS = 0 V, IS = 2.1A (Not 2) N-Ch 1.2 VGS = 0 V, IS = -2.1A (Not 2) P-Ch -1.2 [email protected] 4008-318-123 Unit A V 3 of 3