TYSEMI KDS4501H

Transistors
IC
IC
SMD Type
Product specification
KDS4501H
Features
N-Channel
9.3 A, 30 V
RDS(ON) = 18m
RDS(ON) = 23m
@ VGS = 10 V
@ VGS =4.5V
P-Channel
-5.6 A, -20 V RDS(ON) = 46 m
RDS(ON) = 63 m
@ VGS =- 4.5 V
@ VGS =-2.5V
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P- Channel
Drain to Source Voltage
VDSS
30
-20
V
Gate to Source Voltage
VGS
8
V
-5.6
A
-20
A
Drain Current Continuous (Note 1a)
ID
Drain Current Pulsed
(Note 1b)
2.5
PD
TJ, TSTG
Thermal Resistance Junction to Ambient (Note 1a)
(Note 1)
1.2
W
1
(Note 1c)
Operating and Storage Temperature
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9.3
20
Power Dissipation for Single Operation (Note 1a)
Thermal Resistance Junction to Case
20
Unit
R
R
-55 to 150
JA
50
/W
JC
25
/W
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Transistors
IC
IC
SMD Type
Product specification
KDS4501H
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250
IDSS
Gate-Body Leakage
IGSS
VGS(th)
A
A, Referenced to 25
ID = -250
Zero Gate Voltage Drain Current
A
VGS = 0 V, ID = -250
ID = 250
Breakdown Voltage Temperature
Coefficient
Gate Threshold Voltage
Testconditons
Symbol
A, Referenced to 25
30
P-Ch
-20
Typ
N-Ch
24
P-Ch
-13
N-Ch
1
P-Ch
-1
VGS =
20V, VDS = 0 V
N-Ch
100
VGS =
8 V, VDS = 0 V
P-Ch
100
ID = 250
ID = -250
Static Drain-Source On-Resistance
RDS(on)
RDS(on)
A
A
A, Referenced to 25
A, Referenced to 25
N-Ch
1
1.6
3
P-Ch
-0.4
-0.7
-1.5
N-Ch
-4
P-Ch
3
14
N-Ch
29
17
23
VGS = -4.5 V, ID =-5.6 A
36
46
P-Ch
ID(on)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
N-Ch
20
P-Ch
-20
VDS = 5V, ID = 9.3A
N-Ch
28
VDS = 5V, ID = -5.6A
P-Ch
16
N-Ch
1958
P-Ch
1312
N-Ch
424
P-Ch
240
N-Ch
182
P-Ch
106
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pF
pF
pF
N-Ch
15
27
P-Ch
15
27
N-Ch
5
10
P-Ch
15
27
(Note 2)
P-Channel
N-Ch
38
61
VDD = -10 V, ID = -1 A,
P-Ch
40
64
N-Ch
10
20
P-Ch
25
40
N-Channel
N-Ch
17
27
VDS =15V,ID=9.3A,VGS=4.5V(Note 2)
P-Ch
13
21
N-Ch
4
P-Channel
P-Ch
2.5
VDS=-15V,ID=-2.4A,VGS=-4.5V(Note 2)
N-Ch
5
P-Ch
2.0
VGS = -4.5 V, RGEN = 6
(Note 2)
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m
S
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
V
A
N-Channel
Qgs
Qgd
80
63
VGS = -4.5 V, VDS = -5V
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Reverse Transfer Capacitance
49
47
VGS = 10 V, VDS = 5V
nA
18
VGS = 4.5 V, ID =7.6 A
VGS = -4.5 V, ID =-5.6 A,TJ = 125
A
mV/
21
VGS = 10 V, ID = 9.3 A,TJ = 125
VGS = -2.5 V, ID =-5.0A
On-State Drain Current
mV/
VDS = -16 V, VGS = 0 V
VDS = VGS, ID = 250
Unit
V
VGS = 10 V, ID =9.3A
Static Drain-Source On-Resistance
Max
VDS = 24V, VGS = 0 V
VDS = VGS, ID = -250
Gate Threshold Voltage Temperature
Coefficient
Min
N-Ch
4008-318-123
ns
ns
ns
ns
nC
nC
nC
2 of 3
Transistors
IC
IC
SMD Type
Product specification
KDS4501H
Electrical Characteristics Ta = 25
Parameter
Maximum Continuous Drain-Source
Diode Forward Current
IS
Drain-Source Diode Forward Voltage
VSD
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Testconditons
Symbol
Min
Typ
Max
N-Ch
2.1
P-Ch
-2.1
VGS = 0 V, IS = 2.1A (Not 2)
N-Ch
1.2
VGS = 0 V, IS = -2.1A (Not 2)
P-Ch
-1.2
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Unit
A
V
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