Transistors IC SMD Type NPN Switching Transistor BSV52 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 12 V). +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 100 mA Total power dissipation Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BSV52 Electrical Characteristics Ta = 25 Parameter Symbol ICBO Collector cutoff current Testconditons nA 30 ìA 100 nA DC current gain hFE VCE = 1 V, IC = 10 mA VBEsat 40 120 IC = 10 mA; IB = 300 ìA 300 mV IC = 10 mA; IB = 1 mA 250 mV IC = 50 mA; IB = 5 mA 400 mV 850 mV 1.4 V IC = 10 mA; IB = 1 mA 700 IC = 50 mA; IB = 5 mA Collector capacitance Cc IE = iE = 0; VCB = 5 V; f = 1 MHz 4 pF Emitter capacitance Ce IC = iC = 0; VEB = 1 V; f = 1 MHz 4.5 pF Transition frequency fT Turn-on time ton 400 IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA;IBoff = -1.5 mA Delay time 500 MHz 10 ns td 4 ns Rise time tr 6 ns Turn-off time toff 20 ns Storage time ts 10 ns Fall time tf 10 ns Marking Marking 2 Unit 400 IC = 0; VEB = 4 V base-emitter saturation voltage Max IE = 0; VCB = 20 V IEBO VCEsat Typ IE = 0; VCB = 20 V; Tj = 125 Emitter cutoff current collector-emitter saturation voltage Min B2 www.kexin.com.cn