KEXIN BSV52

Transistors
IC
SMD Type
NPN Switching Transistor
BSV52
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Low voltage (max. 12 V).
+0.1
1.3-0.1
+0.1
2.4-0.1
High current (max. 100 mA).
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
100
mA
Total power dissipation
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
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1
Transistors
IC
SMD Type
BSV52
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Collector cutoff current
Testconditons
nA
30
ìA
100
nA
DC current gain
hFE
VCE = 1 V, IC = 10 mA
VBEsat
40
120
IC = 10 mA; IB = 300 ìA
300
mV
IC = 10 mA; IB = 1 mA
250
mV
IC = 50 mA; IB = 5 mA
400
mV
850
mV
1.4
V
IC = 10 mA; IB = 1 mA
700
IC = 50 mA; IB = 5 mA
Collector capacitance
Cc
IE = iE = 0; VCB = 5 V; f = 1 MHz
4
pF
Emitter capacitance
Ce
IC = iC = 0; VEB = 1 V; f = 1 MHz
4.5
pF
Transition frequency
fT
Turn-on time
ton
400
IC = 10 mA; VCE = 10 V; f = 100 MHz
ICon = 10 mA; IBon = 3 mA;IBoff = -1.5 mA
Delay time
500
MHz
10
ns
td
4
ns
Rise time
tr
6
ns
Turn-off time
toff
20
ns
Storage time
ts
10
ns
Fall time
tf
10
ns
Marking
Marking
2
Unit
400
IC = 0; VEB = 4 V
base-emitter saturation voltage
Max
IE = 0; VCB = 20 V
IEBO
VCEsat
Typ
IE = 0; VCB = 20 V; Tj = 125
Emitter cutoff current
collector-emitter saturation voltage
Min
B2
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