Transistors IC SMD Type PNP Switching Transistors BSR15 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage (max. 60 V). 1 0.55 High current (max. 600 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -600 mA Peak collector current ICM -800 mA Peak base current IBM -200 mA Total power dissipation Ptot 250 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BSR15 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO Testconditons Max Unit IE = 0; VCB = -50 V -20 nA IE = 0; VCB = -50 V; Tj = 150 -20 ìA IC = 0; VEB = -5 V -50 nA IC = -0.1 mA; VCE = -10 V hFE DC current gain collector-emitter saturation voltage base-emitter saturation voltage VBEsat Typ 35 IC = -1 mA; VCE = -10 V 50 IC = -10 mA; VCE = -10 V 75 IC = -150 mA; VCE = -10 V* 100 IC = -500 mA; VCE = -10 V; * 30 300 IC = -150 mA; IB = -15 mA -400 mV IC = -500 mA; IB = -50 mA -1.6 V IC = -150 mA; IB = -15 mA -1.3 V IC = -500 mA; IB = -50 mA -2.6 V 8 pF Collector capacitance Cc IE = ie = 0; VCB = -10 V; f = 1 MHz Emitter capacitance Ce IC = ic = 0; VEB = -2 V; f = 1 MHz Transition frequency fT IC = -50 mA; VCE = -20 V; f = 100 MHz Turn-on time ton ICon = -150 mA; IBon = -15 mA; IBoff = 15 mA ( see Fig ) Delay time 30 200 MHz 40 ns td 12 ns Rise time tr 30 ns Turn-off time toff 365 ns Storage time ts 300 ns Fall time tf 65 ns * Pulse test: tp 300 ìs; d Marking Marking 2 VCEsat Min T7 www.kexin.com.cn 0.02.