Transistors
IC
SMD Type
HEXFET Power MOSFET
KRF9610S
TO-263
Unit: mm
1 .2 7 -0+ 0.1.1
Features
Surface Mount
+0.1
1.27-0.1
+0.2
4.57-0.2
Available in Tape & Reel
5 .2 8 -0+ 0.2.2
Simple Drive Requirements
0.1max
+0.1
1.27-0.1
Fast Switching
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
P-Channel
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
5 .6 0
Dynamic dv/dt Rating
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Continuous Drain Current, VGS @ -10V,Tc = 25
ID
-1.8
Continuous Drain Current, VGS @ -10V,Tc = 100
ID
-1
Pulsed Drain Current*1
IDM
-7
Power Dissipation Tc = 25
PD
20
Unit
A
W
3
Power Dissipation (PCB Mount) Ta = 25
Linear Derating Factor
0.16
Linear Derating Factor (PCB Mount) *3
0.025
W/
V
Gate-to-Source Voltage
VGS
Inductive Current,.Clamp
ILM
-7
A
dv/dt
-5
V/ns
TJ,TSTG
-55 to + 150
Peak Diode Recovery dv/dt *2
Operating Junction and Storage Temperature Range
20
Junction-to-Case
R
JC
6.4
/W
Junction-to-Ambient ( PCB Mounted) *3
R
JA
40
/W
Junction-to-Ambient
R
JA
62
/W
*1Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-1.8A, di/dt
70A/
s, VDD
V(BR)DSS,TJ
150
* 3 When mounted on 1" square PCB
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1
Transistors
IC
SMD Type
KRF9610S
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
V(BR)DSS
VGS = 0V, ID =- 250 A
Min
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
VGS = -10V, ID = -0.9A*1
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 A
-2.0
gfs
VDS = -50V, ID = -0.90A*1
0.90
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Max
V
-0.23
ID = -1mA,Reference to 25
V/
3.0
-4.0
-100
VDS = -160V, VGS = 0V, TJ = 125
-500
VGS = 20V
-100
VGS = -20V
100
Qg
ID = -3.5A
11
Gate-to-Source Charge
Qgs
VDS = -160V
7.0
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V,*1
Turn-On Delay Time
td(on)
VDD = -100V
8.0
ID = -0.90A
15
RG =50
10
RD =110 *1
8.0
tr
Turn-Off Delay Time
td(off)
tf
Intermal Drain Inductance
LD
4.5
Internal Source Inductance
LS
7.5
Input Capacitance
Ciss
VGS = 0V
170
Output Capacitance
Coss
VDS = -25V
50
Reverse Transfer Capacitance
Crss
f = 1.0MHz
15
Body Diode)
A
nA
nC
4.0
Fall Time
Continuous Source Current
V
S
VDS = -200V, VGS = 0V
Total Gate Charge
Rise Time
Unit
-200
Breakdown Voltage Temp. Coefficient
TJ
Typ
ns
nH
pF
IS
-1.8
ISM
-7.0
A
Pulsed Source Current
Body Diode) *2
V
240
360
ns
1.7
2.69
VSD
Reverse Recovery Time
trr
TJ = 25 , IF = -1.8A
Reverse RecoveryCharge
Qrr
di/dt = 100A/
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
-5.8
Diode Forward Voltage
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TJ = 25 , IS = -1.8A, VGS = 0V*1
s*1
C