IC
IC
SMD Type
HEXFET Power MOSFET
KRF7410
Features
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
-20
V
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
-16
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
-13
Pulsed Drain Current *1
IDM
-65
Drain- Source Voltage
A
Power Dissipation *2
@Ta= 25
PD
2.5
Power Dissipation *2
@Ta = 70
PD
1.6
W
20
mW/
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R
JA
8
W
V
-55 to + 150
50
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on 1 in square Cu board, t
10sec.
www.kexin.com.cn
1
IC
IC
SMD Type
KRF7410
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = -250 A
Min
VGS = -2.5V, ID = -13.6A*1
9
VGS = -1.8V, ID = -11.5A*1
13
VDS = -10V, ID = -16A*1
55
-0.9
-1.0
VDS = -9.6V, VGS = 0V, TJ = 70
-25
VGS = -8V
-100
VGS = 8V
100
ID = -16A
Gate-to-Source Charge
Qgs
VDS = -9.6V
18
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -4.5V,*1
25
Turn-On Delay Time
td(on)
VDD = -6V,VGS=-4.5V
13
Rise Time
Fall Time
20
12
18
RG = 6
271
407
tf
RD = 6
200
300
*1
Ciss
VGS = 0V
8676
Output Capacitance
Coss
VDS = -10V
2344
Reverse Transfer Capacitance
Crss
f = 1.0MHz
1604
Body Diode)
nA
nC
ID = -1.0A
Input Capacitance
Continuous Source Current
A
91
td(off)
tr
Turn-Off Delay Time
V
S
VDS = -9.6V, VGS = 0V
Qg
Total Gate Charge
V/
7
gfs
Unit
V
VGS = -4.5V, ID = -16A*1
-0.4
IGSS
Max
0.006
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Typ
-12
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
ns
pF
IS
-2.5
ISM
-65
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
TJ = 25 , IS = -2.5A, VGS = 0V*1
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF =-2.5A
97
145
Reverse RecoveryCharge
Qrr
di/dt = 100A/
134
201
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
-1.2
www.kexin.com.cn
s*1
C