IC
IC
SMD Type
HEXFET Power MOSFET
KRF7104
Features
Adavanced Process Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
1: Source 1
3: Source 2
2: Gate 1
4: Gate 2
7,8: Drain 1
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Continuous Drain Current, VGS @ 10V @ Ta = 25
Parameter
ID
-2.3
Continuous Drain Current, VGS @ 10V @ Ta = 70
ID
-1.8
Pulsed Drain Current *1
IDM
-10
PD
2.0
@TC= 25
Power Dissipation
Linear Derating Factor
0.016
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *3
dv/dt
-3
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *2
R
JA
12
62.5
Unit
A
W
W/
V
V/nS
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Surface mounted on FR-4 board, t
10sec.
*3 ISD
V(BR)DSS,TJ
-2.3A, di/dt
100A/
s, VDD
150
www.kexin.com.cn
1
IC
IC
SMD Type
KRF7104
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Max
0.19
0.25
VGS = -4.5V, ID = -0.50A*1
0.30
0.40
VDS = -15V, ID = -2.3A*1
-1.0
V/
-3.0
2.5
VDS = -16V, VGS = 0V
-2.0
VDS = -16V, VGS = 0V, TJ = 55
-25
VGS = -12V
-100
VGS = 12V
100
Total Gate Charge
Qg
ID = -2.3A
9.3
Qgs
VDS = -10V
1.6
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V *
3.0
Turn-On Delay Time
td(on)
VDD = -10V
12
40
ID = -1.0A
16
40
RG = 6
42
90
RD = 10 *
30
50
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Source Inductance
LS
4.0
Internal Drain Inductance
LD
6.0
Input Capacitance
Ciss
VGS = 0V
290
Output Capacitance
Coss
VDS = -15V
210
Reverse Transfer Capacitance
Crss
f = 1.0MHz
67
V
S
Gate-to-Source Charge
Rise Time
Unit
V
VGS = -10V, ID = -1.0A*1
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Typ
-20
-0.015
gfs
IGSS
Min
TJ ID = -1mA,Reference to 25
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
VGS = 0V, ID = -250 A
A
nA
25
nC
ns
nH
Continuous Source Current
Body Diode)
pF
IS
-2.0
ISM
-9.2
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
TJ = 25 , IS = -1.5A, VGS = 0V*1
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF =-1.5A
69
100
Reverse RecoveryCharge
Qrr
di/dt = -100A/
90
140
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
-1.2
www.kexin.com.cn
s*1
C