IC
IC
SMD Type
HEXFET Power MOSFET
KRF7401
Features
Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25
ID
10
Continuous Drain Current, VGS @ 4.5V,Ta = 25
ID
8.7
Continuous Drain Current, VGS @ 4.5V,TC = 70
ID
7
Pulsed Drain Current*1
IDM
35
Power Dissipation
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt*2
2.5
Unit
A
W
0.02
W/
12
V
dv/dt
5
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
Maximum Junction-to-Ambient
R JA
50
V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
4.1A, di/dt
100A/
s, VDD V(BR)DSS,TJ 150
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IC
IC
SMD Type
KRF7401
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Testconditons
VGS = 0V, ID = 250A
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
gfs
TJ
Min
Typ
20
0.044
ID = 1mA,Reference to 25
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 4.5V, ID = 4.1A*1
V/
0.022
0.030
VDS = VGS, ID = 250 A
0.70
V
VDS = 15V, ID = 4.1A*1
11
S
VDS = 16V, VGS = 0V
1.0
VDS = 16V, VGS = 0V, TJ = 125
25
VGS = 12V
100
VGS = -12V
-100
Total Gate Charge
Qg
ID = 4.1A
48
Gate-to-Source Charge
Qgs
VDS = 16V
5.1
Gate-to-Drain ("Miller") Charge
Qgd
VGS = 4.5V,*1
20
Turn-On Delay Time
td(on)
VDD = 10V
13
tr
ID = 4.1A
72
td(off)
RG = 6.0
65
Fall Time
tf
RD = 2.4
Intermal Drain Inductance
LD
2.5
Internal Source Inductance
LS
4.0
Rise Time
Turn-Off Delay Time
Unit
V
VGS = 2.7V, ID = 3.5A*1
Forward Transconductance
Max
A
nA
nC
ns
92
*1
nH
Input Capacitance
Ciss
VGS = 0V
1600
Output Capacitance
Coss
VDS = 15V
690
Reverse Transfer Capacitance
Crss
ƒ= 1.0MHz
310
Continuous Source Current
Body Diode)
pF
IS
3.1
ISM
35
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
1.0
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF = 4.1A
39
59
Reverse RecoveryCharge
Qrr
di/dt = 100A/
42
63
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
TJ = 25 , IS = 2.0A, VGS = 0V*1
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