IC
IC
SMD Type
HEXFET Power MOSFET
KRF7606
Features
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
-30
V
Continuous Drain Current, VGS @ -10V @ Ta = 25
ID
-3.6
Continuous Drain Current, VGS @ -10V @ Ta = 70
ID
-2.9
Pulsed Drain Current *1
IDM
-29
Drain-Source Voltage
Power Dissipation
@Ta= 25
Power Dissipation
@Ta= 70
PD
1.8
A
W
1.1
Linear Derating Factor
14
Gate-to-Source Voltage
VGS
20
mW/
V
Gate-to-Source Voltage Single Pulse tp 10 S
VGSM
30
V
Peak Diode Recovery dv/dt *2
dv/dt
-5.0
V/ns
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
R
JA
70
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-2.4A, di/dt
-130A/
s, VDD
*3 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
150
10sec.
www.kexin.com.cn
1
IC
IC
SMD Type
KRF7606
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
RDS(on)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
VGS = 0V, ID = 250 A
Min
-0.024
0.075
0.09
VGS = -4.5V, ID = -1.2A*1
0.130
0.15
V/
m
gfs
VDS = -10V, ID = -1.2A*1
2.3
V
S
VDS = -24V, VGS = 0V
-1.0
VDS = -24V, VGS = 0V, TJ = 125
-25
VGS = -20V
-100
VGS = 20V
100
Total Gate Charge
Qg
ID = -2.4A
20
30
Gate-to-Source Charge
Qgs
VDS = -24V
2.1
3.1
Gate-to-Drain ("Miller") Charge
Qgd
VGS = -10V
7.6
11
Turn-On Delay Time
td(on)
VDD = -10V
13
ID = -2.4A
20
td(off)
RG = 6
43
tf
RD=4.0
39
Rise Time
tr
Turn-Off Delay Time
Fall Time
Input Capacitance
Ciss
VGS = 0V
520
Output Capacitance
Coss
VDS = -25V
300
Reverse Transfer Capacitance
Crss
f = 1.0MHz
140
Continuous Source Current
Body Diode)
Unit
V
VGS = -10V, ID = -2.4A*1
-1.0
IGSS
Max
TJ ID = -1mA,Reference to 25
VDS = VGS, ID = -250 A
Gate-to-Source Reverse Leakage
Typ
-30
VGS(th)
IDSS
Drain-to-Source Leakage Current
Testconditons
A
nA
nC
ns
pF
IS
-1.8
ISM
-29
A
Pulsed Source Current
Body Diode) *2
Diode Forward Voltage
VSD
TJ = 25 , IS = -2.4A, VGS = 0V*1
V
ns
Reverse Recovery Time
trr
TJ = 25 , IF =-2.4A
43
64
Reverse RecoveryCharge
Qrr
di/dt = -100A/
50
76
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
2
-1.2
www.kexin.com.cn
s*1
C