Transistors SMD Type NPN General Purpose Transistors H8050 SOT-89 Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ■ Features 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Collector Current: IC=1.5A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1 4.00-0.1 ● Collector Power Dissipation: PC=0.5W 1. Base 2. Collector 3. Emiitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V,IE=0 0.1 μA Collector cut-off current ICEO VCE= 20V, IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE= 1V, IC= 100mA 85 VCE= 1V, IC= 800mA 40 400 Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter on voltage VBE(on) Ic=1V,VCE=10mA Base-emitter positive favor voltage VBEF IB=1A output capacitance Cob VCB=10V,IE=0,f=1MHz Transition frequency fT VCE= 10V, IC=50mA 100 1 V 1.55 V 15 pF MHz ■ hFE Classification Rank B C D D3 hFE 85 ～ 160 120～200 160～300 300～400 www.kexin.com.cn 1 Transistors SMD Type H8050 ■ Typical Characteristics 1000 0.5 0.4 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 1V IB = 3.0mA IB = 2.5mA IB = 2.0mA 0.3 IB = 1.5mA 0.2 IB = 1.0mA 0.1 100 10 IB = 0.5mA 0 0.4 0.8 1.2 1.6 1 0.1 2.0 1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10000 100 IC = 10 IB VCE = 1V V BE(sat) 1000 100 V CE(sat) 10 0.1 1000 Figure 2. DC current Gain IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 10 100 10 1 0.1 0.0 1000 0.2 0.4 0.6 0.8 1.0 1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 IE = 0 f = 1MHz Cob [pF], CAPACITANCE 10 100 10 1 1 10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance 100 VCE = 10V 100 10 1 1 10 100 400 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product www.kexin.com.cn 2