Infrared Emitting Diode(GaAlAs) KLB-16AI-88 The KLB-16I-88 is GaAlAs infrared emitting diode and has the optimized optical characteristics. DIMENSIONS Features • Ultra Wide Viewing Angle • 880nm wavelength • Low forward voltage Applications • Display • Indicator • Key Pad Back Light • Car CCD Camera [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V IF 50 mA IFP 0.7 A PD 75 mW Forward current Pulse forward current Power dissipation *1 Operating temperature Topr. -20 ~ +85 °C Storage temperature Tstg. -30 ~ +100 °C Soldering Temperature *2 Tsol. 260 °C *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Conditions IF = 20 mA Min - Typ 1.30 Max 1.5 Unit V IR VR=5V - - 10 µA Radiant intensity Ie IF = 20 mA 1.0 1.5 - mW/sr Radiant Power Po IF = 20 mA - 1.3 - mW Peak emission wavelength λp IF = 20 mA - 880 - Spectral bandwidth ∆λ IF = 20 mA nm nm Half angle ∆Θ IF = 20 mA - deg. Reverse current Symbol VF 1/2 45 - 160 Infrared Emitting Diode(GaAlAs) KLB-16AI-88 Collector power dissipation Vs Ambient temperature Radiant Intensity vs. Forward current (㎽/sr) 25 Relative intensity (mW/sr) Collector power dissipation(PD ) (mW) 20 15 10 5 0 0 20 40 60 80 10 2 10 1 10 0 10 -1 0 10 100 (℃) 10 2 10 1 Forward current IF Ambient temperature Ta (㎃) 10 3 Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 0.05 10 Intensity [arb.] Relative radiant intensity PO 0.06 1 0.1 0.04 0.03 0.02 0.01 -20 0 20 40 60 80 0 750 800 850 900 950 1000 1050 100 (℃) Wave Length[nm] Ambient temperature Ta Forward current vs. Forward voltage Radiant Pattern Angle(deg) + 60 + 0 -20 -4 0 50 + 80 -80 -100 0 +1 00 30 20 10 5 0 40 +2 0 0 90 80 70 60 50 40 -6 Forward current IF (㎃) 100 (V) 0 0.5 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Forward voltage VF 50 50 Relative intensity(%) 2/2 100