KODENSHI KLB-16AI-88

Infrared Emitting Diode(GaAlAs)
KLB-16AI-88
The KLB-16I-88 is GaAlAs infrared emitting diode
and has the optimized optical characteristics.
DIMENSIONS
Features
• Ultra Wide Viewing Angle
• 880nm wavelength
• Low forward voltage
Applications
• Display
• Indicator
• Key Pad Back Light
• Car CCD Camera
[ Ta=25°C ]
Maximum Ratings
Parameter
Reverse Voltage
Symbol
VR
Ratings
5
Unit
V
IF
50
mA
IFP
0.7
A
PD
75
mW
Forward current
Pulse forward current
Power dissipation
*1
Operating temperature
Topr.
-20 ~ +85
°C
Storage temperature
Tstg.
-30 ~ +100
°C
Soldering Temperature *2
Tsol.
260
°C
*1. IFP Measured under duty ≤ 1/10 @ 1KHz
*2. Soldering time ≤ 5 Sec
Electro-Optical Characteristics
Parameter
Forward voltage
[ Ta=25°C ]
Conditions
IF = 20 mA
Min
-
Typ
1.30
Max
1.5
Unit
V
IR
VR=5V
-
-
10
µA
Radiant intensity
Ie
IF = 20 mA
1.0
1.5
-
mW/sr
Radiant Power
Po
IF = 20 mA
-
1.3
-
mW
Peak emission wavelength
λp
IF = 20 mA
-
880
-
Spectral bandwidth
∆λ
IF = 20 mA
nm
nm
Half angle
∆Θ
IF = 20 mA
-
deg.
Reverse current
Symbol
VF
1/2
45
-
160
Infrared Emitting Diode(GaAlAs)
KLB-16AI-88
Collector power dissipation Vs
Ambient temperature
Radiant Intensity vs.
Forward current
(㎽/sr)
25
Relative intensity (mW/sr)
Collector power dissipation(PD )
(mW)
20
15
10
5
0
0
20
40
60
80
10 2
10 1
10 0
10 -1 0
10
100 (℃)
10 2
10 1
Forward current IF
Ambient temperature Ta
(㎃)
10 3
Relative intensity vs.
Wavelength
Relative radiant intensity vs.
Ambient temperature
0.05
10
Intensity [arb.]
Relative radiant intensity PO
0.06
1
0.1
0.04
0.03
0.02
0.01
-20
0
20
40
60
80
0
750 800 850 900 950 1000 1050
100 (℃)
Wave Length[nm]
Ambient temperature Ta
Forward current vs.
Forward voltage
Radiant Pattern
Angle(deg)
+ 60
+
0
-20
-4
0
50
+ 80
-80 -100
0
+1 00
30
20
10
5
0
40
+2 0
0
90
80
70
60
50
40
-6
Forward current IF
(㎃)
100
(V)
0 0.5 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward voltage VF
50
50
Relative intensity(%)
2/2
100