Infrared Emitting Diode(GaAlAs) KLB-16AI-94 The KLB-16I-94 is GaAlAs infrared emitting diode and has the optimized optical characteristics. DIMENSIONS Features • Ultra Wide Viewing Angle • 940nm wavelength • Low forward voltage Applications • Display • Indicator • Car CCD Camera [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V IF 50 mA IFP 0.7 A PD 75 mW Forward current Pulse forward current Power dissipation *1 Operating temperature Topr. -20 ~ +85 °C Storage temperature Tstg. -30 ~ +100 °C Soldering Temperature *2 Tsol. 260 °C *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Conditions IF = 20 mA Min - Typ 1.20 Max 1.5 Unit V IR VR=5V - - 10 µA Radiant intensity Ie IF = 20 mA 1.0 1.5 - mW/sr Radiant Power Po IF = 20 mA 1.3 - mW Peak emission wavelength λp IF = 20 mA 940 - nm Spectral bandwidth ∆λ IF = 20 mA Half angle ∆Θ IF = 20 mA Reverse current Symbol VF 1/2 - 45 - 160 nm - deg. Infrared Emitting Diode(GaAlAs) KLB-16AI-94 Collector power dissipation Vs Ambient temperature Radiant Intensity vs. Forward current (㎽/sr) 25 Relative intensity (mW/sr) Collector power dissipation(Po ) (mW) 20 15 10 5 0 0 20 40 60 80 100 (℃) 10 2 10 1 10 0 10 -1 0 10 Ambient temperature Ta 10 1 10 2 Forward current IF (㎃) 10 3 Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 0.16 10 Intensity [arb.] Relative radiant intensity PO 0.18 1 0.1 0.14 0.12 0.1 0.08 0.06 0.04 0.02 -20 0 20 40 60 80 0 850 100 (℃) 900 Forward current vs. Forward voltage 0 + 60 +4 +2 0 0 -20 -4 0 -6 50 0 + 80 -80 -100 30 20 0 +1 00 Forward current IF 1050 Angle(deg) 90 80 70 60 50 40 0 1000 Radiant Pattern (㎃) 10 5 0 950 Wave Length[nm] Ambient temperature Ta (V) 0.5 1.0 1.1 1.2 1.3 1.4 1.5 Forward voltage VF 100 50 50 Relative intensity(%) 2/2 100