Light Emitting Diode(InGaN) KLP-342B-X-X KLP-342B-x-x is a high bright InGaN blue LED, and has the optimized optical characteristics. DIMENSIONS Features • Transparent epoxy Encapsulent • High Optical Output Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage (w/o Zener Option) Symbol VR Ratings 5 Unit V Reverse current ( w Zener Option) IR 50 mA Forward current IF 30 mA IFP 0.1 A PD 90 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Po Iv λd Conditions IF = 20 mA Spectral half bandwidth Half angle Optical Output Power Doninant Wave Length IF = 20 mA Min 9.00 350 460 Typ 3.2 12.00 450 - Max 470 Unit V mW mcd nm ∆λ IF = 20 mA - 25 - nm ∆Θ IF = 20 mA - 110 - deg. IF = 40 mA 1/2 Light Emitting Diode(InGaN) KLP-342B-X-X Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 Forward current IF(mA) (IF) 30 Relative intensity 25 20 15 10 0 0 20 40 60 80 (℃) 100 1 0.5 0 5 0 10 Ambient temperature Ta 15 20 25 30 (IF) 35 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 0.8 0.6 0.4 0.2 Reverse Voltage (w/o Zener Option) -20 0 20 40 60 Reverse current ( w Zener Option) 80 0 350 100 (℃) 400 450 500 550 600 Wave Length[nm] Ambient temperature Ta Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) +20 + 60 + 40 -20 -4 0 50 -80 +8 0 10 0 0 25 20 15 -6 0 0 0 100 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 Relative intensity(%) 2/2 -10 0 5 + 100 Forward current IF 30 100