White Light Emitting Diode KLP-563W DIMENSIONS KLP-563W is a High Bright White LED with 3 InGaN LEDs. Features • Epoxy Encapsulent mixed with Phospor • High Optical Output Pin Connection 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Anode 6. Anode Applications • Display • Indicator • Hand Phone Camera Flash • Lighting [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings Unit 5 V IF 90 mA IFP 0.3 A Forward current Pulse forward current Power dissipation *1 PD 270 mW Operating temperature Topr. -30 ~ +85 °C Storage temperature Tstg. -40 ~ +105 °C Tsol. 260 °C Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 60 mA - 3.2 - V Reverse Current IR VR = 5V - - 10.0 µA Optical Output Power Iv IF = 60 mA 4.0 4.5 - cd 0.28 - 0.32 0.29 - 0.34 - 110 - Color Coordinate Half angle x y ∆Θ IF = 60 mA IF = 60 mA 1/2 deg. White Light Emitting Diode KLP-563W Forward current vs. Ambient temperature Radiant Intensity vs. Forward current Forward current IF(mA) (IF) 1.5 Relative intensity 120 90 60 1 0.5 30 0 0 20 40 60 80 0 (℃) 100 20 0 Ambient temperature Ta 40 60 (IF) 100 80 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 0 400 450 500 550 600 650 700 750 100 (℃) Ambient temperature Ta Wave Length[nm] Color Coordinate Radiant Pattern Angle(deg) 0.9 0.8 0.7 +4 0 y -4 0 50 +80 -80 -100 0.4 -20 0 0.5 0 -6 + 60 0.6 +20 0.3 0 + 1 00 0.2 0.1 100 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 x 50 50 Relative intensity(%) 2/2 100