Light Emitting Diode(InGaAlP) KLB-320 O Unit : [mm] DIMENSIONS KLB-320 O is a high bright InGaAlP Orange LED, and has the optimized optical characteristics. Features • Transparent epoxy lens • High Optical Output Applications • Display • Indicator • Signage • Camera • Mobile [ Ta=25°C ] Maximum Ratings Parameter Reverse voltage Symbol VR Ratings 5 Unit V IF 30 mA IFP 100 A PD 90 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +100 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec Keep the distance more than 3mm from soldering foundation. [ Ta=25℃ ] Electro-Optical Characteristics Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 20 mA - 2.5 3.2 V Reverse current IR VR = 5 V - - 50 uA Luminous Intensity Iv IF = 20 mA 8 10 - cd Peak emission wavelength λP IF = 20 mA - 610 - nm Doninant Wave Length λd IF = 20 mA 600 - 610 nm Spectral half bandwidth ∆λ IF = 20 mA - 15 - nm 2∆Θ1/2 IF = 20 mA - 10 - deg. Half angle 1/2 Light Emitting Diode(InGaAlP) KLB-320 O Radiant Intensity vs. Forward current 50 3.0 40 2.0 Relative intensity Forward current IF[mA] Forward current vs. Ambient temperature 30 20 1.0 0.5 10 0 0 0 20 40 60 80 0 5 10 15 20 30 40 50 60 70 80 90 100 100 Forward current IF[mA] Ambient temperature Ta [℃] Relative intensity vs. Wavelength 10 Intensity [arb.] Relative radiant intensity PO Relative radiant intensity vs. Ambient temperature 1 0.1 -20 0 20 40 60 80 100 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 500 550 600 650 700 750 Ambient temperature Ta [℃] Wave Length[nm] Angle(deg) 0 +60 +4 +2 0 0 -2 0 -4 0 50 0 +80 -80 +100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 Forward voltage VF[V] 50 50 Relative intensity(%) 2/2 -1 00 80 70 60 50 40 30 20 10 0 0 Radiant Pattern -6 Forward current IF[mA] Forward current vs. Forward voltage 100