Light Emitting Diode(InGaAlP) KLB-520 R Unit : [mm] DIMENSIONS KLB-520 R is a high bright InGaAlP Red LED, and has the optimized optical characteristics. Features • Transparent epoxy lens • High Optical Output Applications • Display • Indicator • Signage • Camera [ Ta=25°C ] Maximum Ratings Parameter Reverse voltage Forward current Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 Symbol VR Ratings 5 Unit V IF 30 mA IFP 0.5 A PD 70 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +100 °C Tsol. 260 °C *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Symbol VF Forward voltage [ Ta=25°C ] Conditions IF = 20 mA Min - Typ 2.1 Max 2.5 Unit V IR VR = 5 V - - 50 uA Luminous Intensity Iv IF = 20 mA 15 25 - cd Peak emission wavelength λP IF = 20 mA - 629 - nm Doninant Wave Length λd IF = 20 mA 610 - 630 nm Spectral half bandwidth ∆λ IF = 20 mA - 15 - nm 2∆Θ1/2 IF = 20 mA - 8 - deg. Reverse current Half angle 1/2 Light Emitting Diode(InGaAlP) KLB-520 R Forward current vs. 50 Ambient temperature Radiant Intensity vs. Forward current 2.0 Relative intensity Forward current IF[mA] 40 30 20 10 0 0 20 40 60 80 1.0 0.5 0 100 1 0 3 5 10 15 20 25 30 Forward current IF[mA] Ambient temperature Ta [℃] Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 6 10 Intensity [arb.] Relative radiant intensity PO 7 1 0.1 5 4 3 2 1 -20 0 20 40 60 80 0 500 550 600 650 700 750 100 Ambient temperature Ta [℃] Wave Length[nm] Angle(deg) 0 +60 +4 +20 0 -20 -4 0 50 0 + 80 -80 -100 0 +1 00 40 35 30 25 20 15 10 5 0 0 Radiant Pattern -6 Forward current IF[mA] Forward current vs. Forward voltage 100 0.5 1.0 1.5 2.0 2.5 3.0 Forward voltage VF[V] 50 50 Relative intensity(%) 2/2 100