Light Emitting Diode(InGaAlP/InGaN) KLP-34M-X-X DIMENSIONS KLP-34M is a 3 in 1 full color LED. Features • Transparent epoxy Encapsulent • High Optical Output Applications • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V mA IF 30 IFP 0.1 A PD 90 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +105 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions IF = 20 mA/Die Peak emission wavelength VF Po Iv λP IF = 20 mA/Die RED 2 5.50 350 630 Doninant Wave Length Spectral half bandwidth Half angle λd ∆λ ∆Θ IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die 625 20 - Forward voltage Optical Output Power IF = 20 mA/Die 1/2 Typical Value GREEN 3.3 4.50 750 520 BLUE 3.2 8.5 200 468 525 30 110 470 25 - Unit V mW mcd nm nm nm deg. Light Emitting Diode(InGaAlP/InGaN) KLP-34M-X-X Radiant Intensity vs. Forward current 1.5 (IF) 50 40 Relative intensity Forward current IF(mA), Each Chip Forward current vs. Ambient temperature 30 20 10 0 0 20 40 60 1 0.5 (℃) 100 80 0 Ambient temperature Ta Relative radiant intensity vs. Ambient temperature 5 0 10 15 20 25 Forward current IF Relative intensity vs. Wavelength Intensity [arb.] 1.2 Relative radiant intensity PO (IF) 35 30 10 1 B G R 1 0.8 0.6 0.4 0.2 0.1 0 400 450 500 550 600 650 700 -20 0 20 40 60 80 Wave Length[nm] 100 (℃) Ambient temperature Ta Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) G/B +4 0 -20 -4 0 50 0 -80 -100 + 80 10 0 0 +100 5 0 0 +20 +6 0 25 20 15 R -6 Forward current IF 30 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 50 50 Relative intensity(%) Forward voltage VF 2/2 100