APTGF530U120D4G VCES = 1200V IC = 530A @ Tc = 80°C Single switch NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated 5 2 • • • • Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Max ratings 1200 700 530 1200 ±20 3900 Reverse Bias Safe Operating Area Tj = 150°C 1200A @ 1100V RBSOA Parameter Collector - Emitter Breakdown Voltage Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF530U120D4G – Rev0 July, 2008 Symbol VCES APTGF530U120D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V ;VCE = 1200V Tj = 25°C VGE =15V IC = 600A Tj = 125°C VGE = VCE, IC = 16mA VGE = 20V, VCE = 0V Min Typ 4.5 3.2 3.9 5.5 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Max 5 3.7 Unit mA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE=±15V, IC=600A VCE=600V Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 600A RG = 1.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 600A RG = 1.5Ω VGE = 15V Tj = 125°C VBus = 600V IC = 600A Tj = 125°C RG = 1.5Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Typ 37 5.6 2.8 nF 6.3 µC 100 60 ns 530 40 110 70 550 50 ns 22 mJ 46 3900 A Reverse diode ratings and characteristics VRRM IRRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Test Conditions Min VR=1200V Reverse Recovery Charge Err Reverse Recovery Energy Max IF = 480A IF = 960A IF = 480A IF = 480A VR = 800V di/dt =1600A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C Reverse Recovery Time Qrr Typ 1200 Maximum Peak Repetitive Reverse Voltage 800 4000 Tj = 125°C Tj = 25°C 480 2.5 3 1.8 265 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 350 4.5 23 12 24 µA A 3 V ns µC mJ 2-5 APTGF530U120D4G – Rev0 July, 2008 Symbol Characteristic APTGF530U120D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 2500 -40 -40 -40 3 1 Typ Max 0.032 0.07 Unit °C/W V 150 125 125 5 2 350 °C N.m g www.microsemi.com 3-5 APTGF530U120D4G – Rev0 July, 2008 D4 Package outline (dimensions in mm) APTGF530U120D4G Typical Performance Curve Output Characteristics 1200 1000 1000 TJ=25°C TJ = 125°C 600 400 VGE=20V VGE=12V 600 VGE=9V 400 TJ=125°C 200 200 0 0 0 1 2 3 VCE (V) 4 5 6 0 160 120 E (mJ) IC (A) 800 TJ=125°C 400 3 4 VCE (V) 100 80 60 20 0 6 7 8 9 6 Eoff 10 11 0 12 Er Eon 0 5 5 40 TJ=25°C 200 2 VCE = 600V VGE = 15V RG = 1.5 Ω TJ = 125°C 140 1000 600 1 Energy losses vs Collector Current Transfert Characteristics 1200 200 400 600 800 1000 1200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 225 1400 VCE = 600V VGE =15V IC = 600A TJ = 125°C 175 150 1200 Eon 1000 125 IC (A) 200 E (mJ) VGE=15V 800 800 IC (A) IC (A) Output Characteristics (VGE=15V) 1200 Eoff 100 75 800 600 VGE=15V TJ=125°C RG=1.5 Ω 400 50 25 200 Er 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 0 14 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 0.9 0.025 0.7 0.02 0.015 0.01 0.005 IGBT 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF530U120D4G – Rev0 July, 2008 Thermal Impedance (°C/W) 0.035 APTGF530U120D4G Forward Characteristic of diode 1200 60 VCE=600V D=50% RG=1.5 Ω TJ=125°C TC=75°C ZCS 40 1000 800 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 ZVS 20 200 300 TJ=125°C TJ=25°C 400 hard switching 0 100 600 200 400 500 600 700 0 0.00 800 1.00 IC (A) 2.00 VF (V) 3.00 4.00 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.08 0.07 0.06 0.05 0.7 0.04 0.5 0.03 0.3 0.02 0.01 Diode 0.9 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF530U120D4G – Rev0 July, 2008 rectangular Pulse Duration (Seconds)