MICROSEMI APTGT75TDU120PG

APTGT75TDU120PG
Triple Dual Common Source
Fast Trench + Field Stop IGBT®
Power Module
G3
G5
E1
E3
E5
E3/E4
E1/E2
E5/E6
E2
E4
E6
G2
G4
G6
C2
C4
C1
C2
C6
C3
G3
E1
E3
E3/E4
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
C5
G1
G5
E5/E6
E5
E2
E4
E6
G2
G4
G6
C4
Features
•
Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
C6
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
100
75
175
±20
350
Tj = 125°C
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TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
July, 2006
G1
E1/E2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C5
C3
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT75TDU120PG – Rev 1
C1
VCES = 1200V
IC = 75A @ Tc = 80°C
APTGT75TDU120PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 75A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off)
Tf
Td(on)
Tr
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IF
Maximum Reverse Leakage Current
VR=1200V
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
IF = 75A
VGE = 0V
IF = 75A
VR = 600V
di/dt =2000A/µs
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Typ
1.7
2.0
5.0
Min
Test Conditions
DC Forward Current
VF
1.4
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 75A
R G = 4.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 75A
R G = 4.7Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 75A
Tj = 125°C
R G = 4.7Ω
Reverse diode ratings and characteristics
IRM
Min
Typ
5340
280
240
260
30
Max
Unit
250
2.1
µA
6.5
400
V
nA
Max
Unit
V
pF
ns
420
70
285
50
ns
520
90
7
mJ
8.1
Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
75
1.6
1.6
170
Tj = 125°C
280
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
7
14
3
5.5
Max
250
500
Unit
V
µA
A
2.1
V
ns
July, 2006
ICES
Test Conditions
µC
mJ
2-5
APTGT75TDU120PG – Rev 1
Symbol Characteristic
APTGT75TDU120PG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.35
0.58
Unit
°C/W
V
150
125
100
5
250
°C
N.m
g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
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3-5
APTGT75TDU120PG – Rev 1
July, 2006
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTGT75TDU120PG
Typical Performance Curve
Output Characteristics (VGE =15V)
150
Output Characteristics
150
T J = 125°C
125
T J=25°C
100
75
50
25
25
VGE=15V
VGE =9V
0
0
1
2
VCE (V)
3
0
4
1
17.5
T J=25°C
125
3
4
VCE = 600V
VGE = 15V
RG = 4.7Ω
T J = 125°C
15
12.5
TJ=125°C
E (mJ)
100
2
V CE (V)
Energy losses vs Collector Current
Transfert Characteristics
150
75
10
Eoff
Eon
7.5
50
5
25
2.5
Er
0
0
5
6
7
8
9
10
11
0
12
25
Switching Energy Losses vs Gate Resistance
16
VCE = 600V
VGE =15V
IC = 75A
T J = 125°C
14
12
75
100
125
150
Reverse Bias Safe Operating Area
175
Eon
150
125
Eoff
IC (A)
10
50
IC (A)
VGE (V)
E (mJ)
VGE =13V
75
50
0
IC (A)
VGE=17V
T J=125°C
100
IC (A)
IC (A)
125
8
6
Er
100
75
4
50
2
25
0
VGE =15V
TJ=125°C
RG=4.7Ω
0
0
4
8
12 16 20 24
Gate Resistance (ohms)
28
32
0
400
800
V CE (V)
1200
1600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.9
0.3
July, 2006
0.35
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05
0
0.00001
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT75TDU120PG – Rev 1
Thermal Impedance (°C/W)
0.4
APTGT75TDU120PG
Forward Characteristic of diode
150
VCE=600V
D=50%
R G=4.7Ω
TJ =125°C
50
40
100
Tc =75°C
30
ZCS
TJ=25°C
125
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
ZVS
TJ=125°C
75
50
20
10
TJ =125°C
25
Hard
switching
0
0
0
20
40
60
IC (A)
80
100
0
120
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.9
0.5
0.4
0.3
0.2
0.1
Diode
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT75TDU120PG – Rev 1
July, 2006
rectangular Pulse Duration (Seconds)