LRC LIRFZ44N

LESHAN RADIO COMPANY, LTD.
55V N-Channel Mode MOSFET
VDS=55V
RDS(ON), Vgs@10V, Ids@25A =17.5mΩ
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LIRFZ44N
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
TO-220
D
G
S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @T C = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
49
35
160
94
0.63
± 20
25
9.4
5.0
-55 to + 175
Units
A
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.5
–––
62
°C/W
1/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy ‚
IGSS
Min. Typ. Max. Units
Conditions
55
––– –––
V
VGS = 0V, I D = 250µA
––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 17.5 mΩ VGS = 10V, ID = 25A „
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
19
––– –––
S
VDS = 25V, ID = 25A„
––– ––– 25
VDS = 55V, VGS = 0V
µA
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
––– ––– 100
VGS = 20V
nA
––– ––– -100
VGS = -20V
––– ––– 63
ID = 25A
––– ––– 14
nC
VDS = 44V
––– ––– 23
VGS = 10V, See Fig. 6 and 13
–––
12 –––
VDD = 28V
–––
60 –––
ID = 25A
ns
–––
44 –––
RG = 12Ω
–––
45 –––
VGS = 10V, See Fig. 10 „
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
––– 1470 –––
VGS = 0V
––– 360 –––
VDS = 25V
–––
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 530… 150† mJ IAS = 25A, L = 0.47mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
49
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 25A, VGS = 0V „
––– 63
95
ns
TJ = 25°C, IF = 25A
––– 170 260
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, I AS = 25A. (See Figure 12)
ƒ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
2/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
4.5V
10
1
0.1
100
Fig 1. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS = 25V
20µs PULSE WIDTH
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
TJ = 175 °C
11
ID = 49A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1500
1000
Coss
500
ID = 25A
VDS = 44V
VDS = 27V
VDS = 11V
16
12
8
4
Crss
0
1
10
0
100
0
10
VDS , Drain-to-Source Voltage (V)
20
30
40
50
60
70
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2000
20
VGS , Gate-to-Source Voltage (V)
2500
100
100
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.6
1.2
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.4
100µsec
10
1msec
1
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
4/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
50
VDS
VGS
40
RD
D.U.T.
ID , Drain Current (A)
RG
+
-VDD
30
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
300
L
VD S
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
ID
10A
18A
25A
TOP
240
BOTTOM
180
120
60
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel power MOSFETs
7/8
LESHAN RADIO COMPANY, LTD.
LIRFZ44N
8/8