Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SD669 TRANSISTOR (NPN) TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=1mA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA, IB=0 120 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=160V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA 60 hFE(2) VCE=5V, IC=500mA 30 VCE(sat) IC=500mA, IB=50mA 1 V Base-emitter voltage VBE VCE=5V, IC=150mA 1.5 V Transition frequency fT VCE=5V, IC=150mA 140 MHz Cob VCB=10V, IE=0, f=1MHz 14 pF 320 DC current gain Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF hFE(1) Rank Range B C D 60-120 100-200 160-320 Typical Characteristics 2SD669