Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SA1203 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-1mA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-2V, IC=-500mA VCE(sat) IC=-1.5A, IB=-30mA -2 V Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V Transition frequency fT VCE=-2V, IC=-500mA Cob VCB=-10V, IE=0, f=1MHz Collector-emitter saturation voltage Collector output capacitance 100 320 120 50 CLASSIFICATION OF hFE(1) Rank Range Marking MHz O Y 100-200 160-320 HO1 HY1 pF Typical Characteristics 2SA1203