Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 MMSTA42 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.3 A ICM: Collector-base voltage 310 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 310 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA, IB=0 305 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 0.25 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA HFE(1) VCE= 10V, IC= 1mA 60 HFE(2) VCE= 10V, IC=10mA 100 HFE(3) VCE=10V, IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20 mA, IB=2mA 0.9 V DC current gain Transition frequency DEVICE MARKING MMSTA42=K3M fT VCE= 20V, IC= 10mA f=30MHz 50 200 MHz