APTM20DHM16T3G Asymmetrical - Bridge MOSFET Power Module 13 VDSS = 200V RDSon = 16mΩ typ @ Tj = 25°C ID = 104A @ Tc = 25°C 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 23 8 19 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Q4 CR2 4 3 29 30 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 104 77 416 ±30 19 390 104 50 3000 Unit V A August, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM20DHM16T3G – Rev 0 Symbol VDSS APTM20DHM16T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 16 3 Max 250 1000 19 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 140 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID =104A Td(on) Turn-on Delay Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 104A RG = 5Ω 32 Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 7220 2330 146 pF nC 53 67 64 ns 88 116 849 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω µJ 929 936 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 104A, RG = 5Ω µJ 986 Diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=200V IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt =200A/µs V Tj = 25°C Tj = 125°C Tc = 80°C 250 500 Tj = 125°C 100 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C Tj = 25°C 110 200 Tj = 125°C 840 www.microsemi.com Unit µA A V August, 2009 VRRM Test Conditions ns nC 2–7 APTM20DHM16T3G – Rev 0 Symbol Characteristic APTM20DHM16T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ MOSFET diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.32 0.55 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM20DHM16T3G – Rev 0 28 17 1 August, 2009 SP3 Package outline (dimensions in mm) APTM20DHM16T3G Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VGS=15V 600 10V 500 9V 400 8.5V 300 8V 7.5V 200 7V 100 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 250 200 150 100 TJ=25°C 50 TJ=125°C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 2 3 4 5 6 7 8 9 10 DC Drain Current vs Case Temperature 120 RDS(on) vs Drain Current 1.2 Normalized to VGS=10V @ 52A 1.1 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.9 100 80 60 40 20 0.8 0 0 25 50 75 100 125 150 ID, Drain Current (A) 25 50 75 100 125 150 August, 2009 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM20DHM16T3G – Rev 0 ID, Drain Current (A) Transfert Characteristics 300 ID, Drain Current (A) 700 APTM20DHM16T3G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 52A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100 100µs 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 100ms 1 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 0 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25°C VDS=100V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8 VDS=160V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) August, 2009 0 5–7 APTM20DHM16T3G – Rev 0 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM20DHM16T3G Delay Times vs Current Rise and Fall times vs Current 160 120 VDS=133V RG=5Ω TJ=125°C L=100µH 60 40 120 tr and tf (ns) td(on) 100 80 tr 60 40 20 0 0 0 25 0 50 75 100 125 150 175 ID, Drain Current (A) 3 VDS=133V RG=5Ω TJ=125°C L=100µH Eoff Switching Energy (mJ) 1.5 25 50 75 100 125 150 175 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2 Eon 1 0.5 Eoff 0 VDS=133V ID=104A TJ=125°C L=100µH 2.5 Eoff 2 1.5 Eon 1 0.5 25 50 75 100 125 150 175 0 ID, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current 250 ZCS 150 VDS=133V D=50% RG=5Ω TJ=125°C TC=75°C 100 50 ZVS Hard switching 0 25 38 50 63 75 88 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 200 5 10 15 20 25 30 35 40 45 50 1000 100 TJ=150°C TJ=25°C 10 100 ID, Drain Current (A) 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com August, 2009 0 Frequency (kHz) tf 6–7 APTM20DHM16T3G – Rev 0 td(on) and td(off) (ns) td(off) 80 20 Eon and Eoff (mJ) VDS=133V RG=5Ω TJ=125°C L=100µH 140 100 APTM20DHM16T3G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 150 100 TJ=125°C TJ=25°C 50 0 0.0 0.5 1.0 TJ=125°C VR=133V 100 A 100 130 A 80 50 A 60 40 1.5 0 200 QRR vs. Current Rate Charge 2.00 100 A TJ=125°C VR=133V 1.75 130 A 50 A 1.50 1.25 1.00 0.75 0.50 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) 1000 1200 IRRM vs. Current Rate of Charge 50 TJ=125°C VR=133V 40 100 A 130 A 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 3200 2800 Duty Cycle = 0.5 TJ=150°C 125 2400 IF(AV) (A) C, Capacitance (pF) 400 600 800 -diF/dt (A/µs) 2000 1600 1200 100 75 50 800 August, 2009 QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 25 400 0 0 1 10 100 1000 25 VR, Reverse Voltage (V) 50 75 100 125 150 Case Temperature (°C) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM20DHM16T3G – Rev 0 IF, Forward Current (A) Trr vs. Current Rate of Charge 120 200