MICROSEMI APTM20DHM16T3G

APTM20DHM16T3G
Asymmetrical - Bridge
MOSFET Power Module
13
VDSS = 200V
RDSon = 16mΩ typ @ Tj = 25°C
ID = 104A @ Tc = 25°C
14
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Q1
CR3
18
22
7
23
8
19
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Q4
CR2
4
3
29
30
32
31
15
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
13
32
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
104
77
416
±30
19
390
104
50
3000
Unit
V
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM20DHM16T3G – Rev 0
Symbol
VDSS
APTM20DHM16T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 200V
VGS = 0V,VDS = 160V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 52A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
16
3
Max
250
1000
19
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID =104A
Td(on)
Turn-on Delay Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
RG = 5Ω
32
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
7220
2330
146
pF
nC
53
67
64
ns
88
116
849
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
µJ
929
936
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
µJ
986
Diode ratings and characteristics
IRM
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=200V
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 133V
di/dt =200A/µs
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
250
500
Tj = 125°C
100
1
1.4
0.9
Tj = 25°C
60
Tj = 125°C
Tj = 25°C
110
200
Tj = 125°C
840
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Unit
µA
A
V
August, 2009
VRRM
Test Conditions
ns
nC
2–7
APTM20DHM16T3G – Rev 0
Symbol Characteristic
APTM20DHM16T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
MOSFET
diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.32
0.55
Unit
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦⎥
⎣⎢
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM20DHM16T3G – Rev 0
28
17
1
August, 2009
SP3 Package outline (dimensions in mm)
APTM20DHM16T3G
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.9
0.3
0.25
0.7
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VGS=15V
600
10V
500
9V
400
8.5V
300
8V
7.5V
200
7V
100
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
250
200
150
100
TJ=25°C
50
TJ=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
2
3
4
5
6
7
8
9 10
DC Drain Current vs Case Temperature
120
RDS(on) vs Drain Current
1.2
Normalized to
VGS=10V @ 52A
1.1
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.9
100
80
60
40
20
0.8
0
0
25
50
75
100
125
150
ID, Drain Current (A)
25
50
75
100
125
150
August, 2009
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
TC, Case Temperature (°C)
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4–7
APTM20DHM16T3G – Rev 0
ID, Drain Current (A)
Transfert Characteristics
300
ID, Drain Current (A)
700
APTM20DHM16T3G
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
2.5
VGS=10V
ID= 52A
2.0
1.5
1.0
0.5
0.0
-50 -25
1.1
1.0
0.9
0.8
0.7
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
limited by
RDSon
100
100µs
1ms
10
Single pulse
TJ=150°C
TC=25°C
10ms
100ms
1
25 50
75 100 125 150
1
TC, Case Temperature (°C)
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
1000
Crss
100
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=104A
VDS=40V
12
TJ=25°C
VDS=100V
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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8
VDS=160V
6
4
2
0
0
20
40
60
80 100 120 140 160
Gate Charge (nC)
August, 2009
0
5–7
APTM20DHM16T3G – Rev 0
-50 -25
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
APTM20DHM16T3G
Delay Times vs Current
Rise and Fall times vs Current
160
120
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
60
40
120
tr and tf (ns)
td(on)
100
80
tr
60
40
20
0
0
0
25
0
50 75 100 125 150 175
ID, Drain Current (A)
3
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Switching Energy (mJ)
1.5
25
50 75 100 125 150 175
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
Eon
1
0.5
Eoff
0
VDS=133V
ID=104A
TJ=125°C
L=100µH
2.5
Eoff
2
1.5
Eon
1
0.5
25
50
75
100 125 150 175
0
ID, Drain Current (A)
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
250
ZCS
150
VDS=133V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
100
50
ZVS
Hard
switching
0
25
38
50
63
75
88
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
300
200
5 10 15 20 25 30 35 40 45 50
1000
100
TJ=150°C
TJ=25°C
10
100
ID, Drain Current (A)
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
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August, 2009
0
Frequency (kHz)
tf
6–7
APTM20DHM16T3G – Rev 0
td(on) and td(off) (ns)
td(off)
80
20
Eon and Eoff (mJ)
VDS=133V
RG=5Ω
TJ=125°C
L=100µH
140
100
APTM20DHM16T3G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
0.3
0.1
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
150
100
TJ=125°C
TJ=25°C
50
0
0.0
0.5
1.0
TJ=125°C
VR=133V
100 A
100
130 A
80
50 A
60
40
1.5
0
200
QRR vs. Current Rate Charge
2.00
100 A
TJ=125°C
VR=133V
1.75
130 A
50 A
1.50
1.25
1.00
0.75
0.50
0
200
400
600
800
1000 1200
IRRM, Reverse Recovery Current (A)
1000 1200
IRRM vs. Current Rate of Charge
50
TJ=125°C
VR=133V
40
100 A
130 A
50 A
30
20
10
0
0
200
400
-diF/dt (A/µs)
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
150
3200
2800
Duty Cycle = 0.5
TJ=150°C
125
2400
IF(AV) (A)
C, Capacitance (pF)
400 600 800
-diF/dt (A/µs)
2000
1600
1200
100
75
50
800
August, 2009
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
25
400
0
0
1
10
100
1000
25
VR, Reverse Voltage (V)
50
75
100
125
150
Case Temperature (°C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7–7
APTM20DHM16T3G – Rev 0
IF, Forward Current (A)
Trr vs. Current Rate of Charge
120
200