APTC60DDAM45CT1G VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual boost chopper Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration • • Pins 3/4 must be shorted together Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A March, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC60DDAM45CT1G – Rev 0 Symbol VDSS APTC60DDAM45CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5Ω 405 µJ 520 658 µJ 635 Chopper SiC diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C IF = 20A, VR = 300V di/dt =1800A/µs IF = 20A Typ Max 100 200 20 1.6 2 400 2000 28 f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 www.microsemi.com Unit V µA A 1.8 2.4 V March, 2009 IRM Test Conditions nC pF 2–7 APTC60DDAM45CT1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60DDAM45CT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ CoolMOS SiC Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.5 1.5 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC60DDAM45CT1G – Rev 0 March, 2009 SP1 Package outline (dimensions in mm) APTC60DDAM45CT1G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 100 80 60 40 TJ=125°C 20 TJ=25°C 0 5 10 15 20 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 0.9 40 30 20 10 March, 2009 0 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTC60DDAM45CT1G – Rev 0 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 March, 2009 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 50A 2.5 60 80 100 120 140 160 Gate Charge (nC) 5–7 APTC60DDAM45CT1G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DDAM45CT1G APTC60DDAM45CT1G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 40 30 tr 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.2 Eoff Eon 0.8 40 50 60 70 80 Switching Energy vs Gate Resistance 2 Switching Energy (mJ) 0.4 VDS=400V ID=50A TJ=125°C L=100µH 1.5 Eoff 1 Eon 0.5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 200 150 ZCS 100 hard switching 50 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current ZVS 0 5 20 30 40 50 Gate Resistance (Ohms) 300 250 10 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) www.microsemi.com Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 March, 2009 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 30 ID, Drain Current (A) Switching Energy vs Current 1.6 Frequency (kHz) tf VSD, Source to Drain Voltage (V) 6–7 APTC60DDAM45CT1G – Rev 0 td(on) and td(off) (ns) 120 APTC60DDAM45CT1G SiC Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 400 30 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=175°C 20 TJ=125°C 10 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175°C 350 300 TJ=125°C 250 200 TJ=75°C 150 100 TJ=25°C 50 0 200 300 400 500 600 700 800 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 600 400 March, 2009 200 0 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTC60DDAM45CT1G – Rev 0 C, Capacitance (pF) 800