APTM100VDA35T3G Dual Boost chopper MOSFET Power Module VDSS = 1000V RDSon = 350mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction (PFC) • Interleaved PFC 28 27 26 25 23 22 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability • RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 22 17 88 ±30 420 390 25 50 3000 Unit V A September, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100VDA35T3G– Rev 0 Symbol VDSS APTM100VDA35T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 11A VGS = VDS, ID = 2.5mA VGS = ±30V, VDS = 0V Typ 350 3 Max 100 500 420 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 22A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 5.2 0.88 0.16 nF 186 nC 24 122 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 22A RG = 5Ω 12 ns 155 40 900 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω µJ 623 1423 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 22A, RG = 5Ω µJ 779 Chopper diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1000V IF = 40A IF = 80A IF = 40A IF = 40A VR = 667V di/dt=200A/µs www.microsemi.com Min 1000 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C 40 2.5 3.1 2 Tj = 25°C 250 Tj = 125°C 310 Tj = 25°C 415 Tj = 125°C 1650 Unit V µA A 3 V September, 2009 IRM Test Conditions ns nC 2–7 APTM100VDA35T3G– Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTM100VDA35T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Chopper diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.32 1.2 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎢⎣ ⎝ T25 T ⎠⎥⎦ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM100VDA35T3G– Rev 0 28 17 1 September, 2009 SP3 Package outline (dimensions in mm) APTM100VDA35T3G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 7V 40 6.5V 30 6V 20 5.5V 10 60 50 40 30 0 5 10 15 20 25 TJ=25°C 20 10 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 TJ=125°C 30 0 1.2 VGS=10V VGS=20V 1 3 4 5 6 7 8 9 25 Normalized to VGS=10V @ 11A 1.1 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.9 20 15 10 0.8 5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 25 50 75 100 125 September, 2009 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100VDA35T3G– Rev 0 VGS=15, 10&8V 50 ID, Drain Current (A) ID, Drain Current (A) 60 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=11A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs limited by RDSon 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 0.6 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 10000 Ciss Coss 1000 Crss 100 0 10 20 30 40 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 10 100 1000 VDS, Drain to Source Voltage (V) 50 VDS, Drain to Source Voltage (V) 14 ID=22A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 0 50 100 150 200 250 September, 2009 VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) Gate Charge (nC) www.microsemi.com 5–7 APTM100VDA35T3G– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100VDA35T3G APTM100VDA35T3G Delay Times vs Current Rise and Fall times vs Current 80 180 td(off) VDS=670V RG=5Ω TJ=125°C L=100µH 70 140 60 120 tr and tf (ns) VDS=670V RG=5Ω TJ=125°C L=100µH 100 80 60 40 50 40 tr 30 20 td(on) 10 20 0 0 0 10 20 30 40 50 0 10 ID, Drain Current (A) 50 4 Eon VDS=670V RG=5Ω TJ=125°C L=100µH 2 1.5 Switching Energy (mJ) Eoff 1 0.5 VDS=670V ID=22A TJ=125°C L=100µH 3.5 3 2.5 Eoff 2 Eon 1.5 Eoff 1 0.5 0 0 0 10 20 30 40 50 0 ID, Drain Current (A) 5 10 15 20 25 30 35 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 250 225 200 ZVS 175 150 125 100 75 ZCS VDS=670V D=50% RG=5Ω TJ=125°C TC=75°C 50 25 0 5 8 Hard switching 10 13 15 18 ID, Drain Current (A) 100 20 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 September, 2009 Switching Energy (mJ) 20 30 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 Frequency (kHz) tf VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM100VDA35T3G– Rev 0 td(on) and td(off) (ns) 160 APTM100VDA35T3G Typical chopper diode performance curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 400 80 60 TJ=125°C 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=667V 350 300 250 200 80 A 150 40 A 20 A 100 3.0 0 200 80 A TJ=125°C VR=667V 40 A 2 20 A 1 0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 3 600 800 1000 1200 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 4 400 IRRM vs. Current Rate of Charge 40 TJ=125°C VR=667V 30 40 A 80 A 20 A 20 10 0 -diF/dt (A/µs) 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 150 125 100 75 50 September, 2009 25 0 1 10 100 1000 VR, Reverse Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM100VDA35T3G– Rev 0 C, Capacitance (pF) 175