MICROSEMI APTGF25H120T3G

APTGF25H120T3G
Full - Bridge
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
Q1
CR3
CR1
18
19
Q2
22
7
23
8
CR2
26
Q3
11
10
CR4
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Q4
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
VCES = 1200V
IC = 25A @ Tc = 80°C
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
• RoHS compliant
Absolute maximum ratings
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
40
25
100
±20
208
Tj = 125°C
[email protected]
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
March, 2009
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGF25H120T3G – Rev 2
Symbol
VCES
APTGF25H120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
Tj = 25°C
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 25A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
Typ
VGE = 0V
VCE = 1200V
2.5
3.2
4.0
4
Max
250
500
3.7
Unit
µA
V
6
400
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 600V
IC =25A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 25A
RG = 22Ω
VGE = 15V
Tj = 125°C
VBus = 600V
IC = 25A
Tj = 125°C
RG = 22Ω
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
1650
250
110
160
10
70
60
50
305
pF
nC
ns
30
60
50
346
ns
40
3.5
mJ
1.5
Reverse diode ratings and characteristics
IRM
Min
IF
Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
Max
1200
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=1200V
IF = 25A
VGE = 0V
IF = 25A
VR = 600V
di/dt =1000A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
100
250
Tc = 80°C
Tj = 25°C
Tj = 125°C
25
2.1
1.9
Tj = 25°C
95
Tj = 125°C
190
Tj = 25°C
2.1
Tj = 125°C
Tj = 25°C
Tj = 125°C
4.5
0.75
1.5
µA
A
V
March, 2009
VRRM
Test Conditions
ns
µC
mJ
2-6
APTGF25H120T3G – Rev 2
Symbol Characteristic
APTGF25H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT =
R25
Min
Typ
50
3952
Max
Unit
kΩ
K
Min
Typ
Max
0.6
1.2
Unit
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTGF25H120T3G – Rev 2
28
17
1
March, 2009
SP3 Package outline (dimensions in mm)
APTGF25H120T3G
Typical Performance Curve
Output characteristics (VGE=15V)
250µs Pulse Test
< 0.5% Duty cycle
70
50
TJ=125°C
40
30
20
10
16
TJ=25°C
12
8
TJ=125°C
4
0
0
1
2
3
4
5
6
7
VCE, Collector to Emitter Voltage (V)
0
8
VGE, Gate to Emitter Voltage (V)
Transfer Characteristics
120
250µs Pulse Test
< 0.5% Duty cycle
100
80
60
40
TJ=125°C
20
TJ=25°C
0
2.5
5
7.5
10
12.5
VGE, Gate to Emitter Voltage (V)
TJ = 125°C
250µs Pulse Test
< 0.5% Duty cycle
8
7
Ic=50A
6
5
Ic=25A
4
3
2
Ic=12.5A
1
0
9
10
11
12
13
14
IC = 25A
TJ = 25°C
16
2
2.5
3
3.5
VCE=240V
VCE=600V
14
12
10
VCE=960V
8
6
4
2
0
0
15
16
6
30
60
90
120
150
180
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
5
3
Ic=12.5A
2
1
0
-50
60
Ic, DC Collector Current (A)
1.05
1.00
0.95
0.90
0.85
0.80
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
50
40
March, 2009
Breakdown Voltage vs Junction Temp.
1.10
Ic=50A
Ic=25A
4
VGE, Gate to Emitter Voltage (V)
Collector to Emitter Breakdown Voltage
(Normalized)
1.5
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
9
1
Gate Charge
18
15
VCE, Collector to Emitter Voltage (V)
0
0.5
VCE, Collector to Emitter Voltage (V)
30
20
10
0
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
www.microsemi.com
-50
-25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
4-6
APTGF25H120T3G – Rev 2
0
Ic, Collector Current (A)
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
60
VCE, Collector to Emitter Voltage (V)
Output Characteristics (VGE=10V)
20
Ic, Collector Current (A)
Ic, Collector Current (A)
80
APTGF25H120T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
VCE = 600V
RG = 22Ω
70
65
VGE = 15V
60
55
50
5
15
25
35
45
400
VGE=15V,
TJ=125°C
350
300
250
200
55
5
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 22Ω
120
45
tf, Fall Time (ns)
tr, Rise Time (ns)
35
45
55
Current Fall Time vs Collector Current
80
VGE=15V
40
0
5
TJ = 125°C
40
35
TJ = 25°C
30
15
25
35
45
VCE = 600V, VGE = 15V, RG = 22Ω
20
55
5
ICE, Collector to Emitter Current (A)
VCE = 600V
RG = 22Ω
8
TJ=125°C,
VGE=15V
6
TJ=25°C,
VGE=15V
4
2
0
55
4
VCE = 600V
VGE = 15V
RG = 22Ω
3
TJ = 125°C
2
TJ = 25°C
1
0
5
15
25
35
45
ICE, Collector to Emitter Current (A)
55
5
Switching Energy Losses vs Gate Resistance
15
25
35
45
ICE, Collector to Emitter Current (A)
55
Reverse Bias Safe Operating Area
60
IC, Collector Current (A)
Eon, 25A
3
Eoff, 25A
2
1
0
50
40
30
March, 2009
VCE = 600V
VGE = 15V
TJ= 125°C
4
15
25
35
45
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
10
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
25
50
25
Switching Energy Losses (mJ)
15
ICE, Collector to Emitter Current (A)
160
5
VGE=15V,
TJ=25°C
VCE = 600V
RG = 22Ω
20
10
0
0
10
20
30
40
50
60
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
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5-6
APTGF25H120T3G – Rev 2
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
75
APTGF25H120T3G
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
Thermal Impedance (°C/W)
0.5
100
80
ZVS
VCE = 600V
D = 50%
RG = 22Ω
TJ = 125°C
TC= 75°C
60
40
Hard
switching
ZCS
20
50
0
0
10
20
30
IC, Collector Current (A)
40
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
Operating Frequency vs Collector Current
120
0.9
0.7
0.4
0.3
0.2
0.1
0.5
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGF25H120T3G – Rev 2
March, 2009
Rectangular Pulse Duration (Seconds)