APTGF50DH60TG Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 CR3 E1 O UT2 Q4 G4 CR2 E4 0/VBUS SENSE NTC1 NT C2 0/VBUS VBUS SENSE G4 E4 VBUS 0/VBUS E1 0/VBUS SENSE G1 Symbol VCES OUT1 NTC2 NTC1 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant OUT2 Absolute maximum ratings Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 65 50 230 ±20 250 Tj = 125°C 100A@500V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 OUT1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF50DH60TG – Rev 1 G1 VCES = 600V IC = 50A @ Tc = 80°C APTGF50DH60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Tj = 25°C Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 2200 323 200 166 20 100 40 9 Max 250 500 2.45 IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/µs www.microsemi.com V Max Unit pF nC ns 12 42 10 ns 130 21 0.5 mJ 1 Typ Max Unit V Tj = 25°C Tj = 125°C Tc = 70°C µA V nA 600 VR=600V Unit 6 400 120 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.0 2.2 4 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C R G = 2.7Ω Symbol Characteristic IRM 1.7 VGE = 15V VBus = 300V IC = 50A Diode ratings and characteristics VRRM Typ VGE = 0V VCE = 600V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Min 250 500 Tj = 125°C 60 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C Tj = 25°C 170 220 Tj = 125°C 920 µA A 1.8 V July, 2006 ICES Test Conditions ns nC 2-6 APTGF50DH60TG – Rev 1 Symbol Characteristic APTGF50DH60TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.5 0.9 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF50DH60TG – Rev 1 July, 2006 SP4 Package outline (dimensions in mm) APTGF50DH60TG Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 TJ=-55°C 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) TJ=25°C 100 TJ=125°C 50 0 250µs Pulse Test < 0.5% Duty cycle 100 TJ=25°C 50 TJ=125°C 0 0 1 2 3 4 0 1 2 3 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 125 100 75 50 TJ=125°C 25 TJ=-55°C TJ=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=100A 5 4 3 Ic=50A 2 1 Ic=25A 0 6 8 10 12 14 14 VCE=300V 12 VCE =480V 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 8 VCE=120V IC = 50A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 4 Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 On state Voltage vs Junction Temperature 4 3.5 Ic=100A 3 2.5 Ic=50A 2 1.5 Ic=25A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 80 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 70 60 50 40 July, 2006 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 4-6 APTGF50DH60TG – Rev 1 Ic, Collector Current (A) 150 APTGF50DH60TG Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 200 175 150 VGE=15V, TJ=125°C 125 100 75 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V R G = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, T J=125°C 125 150 40 T J = 125°C 30 20 TJ = 25°C 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 1.5 Eoff, Turn-off Energy Loss (mJ) TJ=125°C, VGE=15V VCE = 400V R G = 2.7Ω 1 0.5 0 0 25 50 75 100 125 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 2 E on, Turn-On Energy Loss (mJ) 100 10 10 2.5 VCE = 400V VG E = 15V RG = 2.7Ω 2 TJ = 125°C 1.5 1 0.5 0 150 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 120 V CE = 400V V GE = 15V TJ= 125°C Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 60 July, 2006 2.5 IC , Collector Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ =25°C VCE = 400V RG = 2.7Ω 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 www.microsemi.com 0 200 400 600 VCE , Collector to Emitter Voltage (V) 5-6 APTGF50DH60TG – Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50DH60TG Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 50 240 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 200 160 120 80 ZCS ZVS hard switching 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF50DH60TG – Rev 1 July, 2006 Thermal Impedance (°C/W) 0.6