APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID 27 2 T- D G SO "UL Recongnized" file # 145592 ISOTOP fi • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol S S D G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8011JFLL UNIT 800 Volts 51 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 1 204 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 51 (Repetitive and Non-Repetitive) 1 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 25.5A) TYP MAX UNIT Volts 0.125 Ohms Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA 5-2006 Characteristic / Test Conditions 050-7094 Rev B Symbol APT8011JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 400V tf ID = 51A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 1390 VDD = 533V, VGS = 15V 1545 ID = 51A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 19 RG = 0.6Ω Eon UNIT pF 340 650 100 525 23 23 83 ID = 51A @ 25°C Turn-off Delay Time MAX 9480 1890 VDD = 400V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 2095 VDD = 533V VGS = 15V ID = 51A, RG = 5Ω 1800 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 51 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 204 Diode Forward Voltage 2 (VGS = 0V, IS = -51A) 1.3 Volts 18 V/ns Peak Diode Recovery dt UNIT dv/ dt 5 t rr Reverse Recovery Time (IS = -51A, di/dt = 100A/µs) Tj = 25°C 375 Tj = 125°C 1200 Q rr Reverse Recovery Charge (IS = -51A, di/dt = 100A/µs) Tj = 25°C 2.5 Tj = 125°C 18 IRRM Peak Recovery Current (IS = -51A, di/dt = 100A/µs) Tj = 25°C 16 Tj = 125°C 36 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.12 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7094 Rev B 5-2006 0.20 0.3 0.1 0 t1 t2 0.04 SINGLE PULSE 0.05 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 2.77mH, RG = 25Ω, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 0.0375 0.142 Dissipated Power (Watts) 0.0554 0.751 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. ID, DRAIN CURRENT (AMPERES) TC ( C) ZEXT TJ ( C) 100 80 TJ = -55°C 60 TJ = +25°C 40 TJ = +125°C 20 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 5.5V 100 5V 80 60 4.5V 40 20 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V D 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 140 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 = 25.5A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 NORMALIZED TO = 10V @ 25.5A GS -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V 6V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 5-2006 ID, DRAIN CURRENT (AMPERES) 120 1.15 60 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VGS =15 & 10V 050-7094 Rev B 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 120 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 140 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 APT8011JFLL 160 OPERATION HERE LIMITED BY RDS (ON) 100 100µS 50 1mS 10 5 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 D = 51A 12 VDS= 160V VDS= 400V 8 VDS= 640V 4 0 0 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE Coss 1,000 Crss 100 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I Ciss 10,000 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 APT8011JFLL 30,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 204 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120 350 300 V DD R G td(off) 100 = 533V = 5Ω T = 125°C J 250 V DD R G 200 = 5Ω T = 125°C J L = 100µH 150 100 50 3500 V DD R G 30 14,000 = 533V = 5Ω EON includes diode reverse recovery. Eon 2000 1500 1000 Eoff 500 20 I DD D 30 = 533V = 51A T = 125°C J L = 100µH 0 10 20 V 12,000 T = 125°C 30 40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (µJ) SWITCHING ENERGY (µJ) 5-2006 050-7094 Rev B 2500 tr 40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT J 3000 40 0 10 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 4000 20 60 20 td(on) 0 10 tf 80 = 533V tr and tf (ns) td(on) and td(off) (ns) L = 100µH Eoff L = 100µH E ON includes 10,000 diode reverse recovery. 8,000 6,000 4,000 Eon 2,000 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT8011JFLL 10% Gate Voltage 90% TJ = 125°C Gate Voltage td(off) td(on) tr DrainVoltage Drain Current 90% 90% 5% 10% TJ = 125°C tf 5% 10% Drain Current DrainVoltage Switching Energy Switching Energy 0 Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DD IC V CE G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 5-2006 r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7094 Rev B 7.8 (.307) 8.2 (.322) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)