APT8020JLL
800V
POWER MOS 7
R
33A 0.200Ω
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT8020JLL
UNIT
800
Volts
33
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
PD
TJ,TSTG
1
132
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
33
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 16.5A)
TYP
MAX
Volts
0.200
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7079 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8020JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1000
Crss
Reverse Transfer Capacitance
f = 1 MHz
190
VGS = 10V
195
VDD = 400V
27
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
tr
td(off)
tf
ID = 33A @ 25°C
14
VDD = 400V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
10
INDUCTIVE SWITCHING @ 25°C
6
760
VDD = 533V, VGS = 15V
6
ns
39
ID = 33A @ 25°C
Turn-off Delay Time
nC
12
VGS = 15V
Rise Time
pF
130
RESISTIVE SWITCHING
Turn-on Delay Time
UNIT
5200
VGS = 0V
3
MAX
ID = 33A, RG = 5Ω
715
INDUCTIVE SWITCHING @ 125°C
1250
VDD = 533V, VGS = 15V
ID = 33A, RG = 5Ω
µJ
780
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
33
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -33A, dl S/dt = 100A/µs)
920
ns
Q rr
Reverse Recovery Charge (IS = -33A, dl S/dt = 100A/µs)
20.7
µC
dv/
Peak Diode Recovery
dt
142
(Body Diode)
1.3
(VGS = 0V, IS = -33A)
Amps
Volts
10
V/ns
MAX
UNIT
dv/
5
dt
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.51mH, RG = 25Ω, Peak IL = 33A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID33A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.20
0.7
0.15
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7079 Rev B
7-2004
0.25
0.5
0.3
t1
t2
0.05
Duty Factor D = t1/t2
0.1
0
SINGLE PULSE
0.05
10-5
10-4
°C/W
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8020JLL
100
0.0528
Power
(watts)
0.0651
0.123
0.0203F
0.173F
0.490F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
8V
VGS =15 &10 V
80
7V
60
6.5V
40
6V
20
5.5V
5V
80
60
TJ = +125°C
40
TJ = -55°C
TJ = +25°C
20
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
0
25
I
D
V
D
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
10
20
30
40
50 60 70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 16.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 16.5A
GS
1.30
1.15
35
0.0
-50
V
1.1
1.0
0.9
0.8
7-2004
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
050-7079 Rev B
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
OPERATION HERE
LIMITED BY RDS (ON)
50
10,000
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
I
D
= 33A
12
VDS=160V
8
VDS=400V
VDS=640V
4
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Crss
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
180
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
G
V
120
DD
R
G
J
L = 100µH
tf
= 533V
= 5Ω
T = 125°C
J
100
= 5Ω
T = 125°C
80
140
= 533V
DD
R
tr and tf (ns)
td(on) and td(off) (ns)
100
td(off)
160
L = 100µH
80
60
40
tr
60
40
20
td(on)
20
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
2000
0
10
60
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
5000
= 533V
I
T = 125°C
J
L = 100µH
E ON includes
diode reverse recovery.
1500
Eoff
Eon
1000
500
0
10
20
V
= 5Ω
SWITCHING ENERGY (µJ)
2500
SWITCHING ENERGY (µJ)
200
100
200
7-2004
Coss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
1,000
10mS
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
050-7079 Rev B
AP8020JLL
20,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
132
100
DD
D
30
= 533V
= 38A
T = 125°C
4000
J
L = 100µH
EON includes
Eoff
diode reverse recovery.
3000
Eon
2000
1000
0
20
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8020JLL
90%
Gate Voltage
10%
TJ125°C
Gate Voltage
T 125°C
J
td(off)
td(on)
tr
tf
90%
10%
0
5%
5%
Drain Voltage
90%
Drain Current
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF100
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
7-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7079 Rev B
7.8 (.307)
8.2 (.322)