APTC60DAM24T1G Boost chopper Super Junction MOSFET Power Module 5 6 11 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 3 4 Q2 VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C NTC Features • 9 10 1 2 • • • 12 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A August, 2007 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC60DAM24T1G – Rev 0 Symbol VDSS APTC60DAM24T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 47.5A VGS = VDS, ID = 5mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14.4 17 Max 350 600 24 3.9 200 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz nF 300 VGS = 10V VBus = 300V ID = 95A nC 68 102 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 1350 µJ 1040 2200 µJ 1270 Chopper diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=600V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/µs www.microsemi.com Min 600 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C Tj = 25°C 100 1.6 2 1.3 160 Tj = 125°C 220 Tj = 25°C 290 Tj = 125°C 1530 Unit V µA A 2 V ns August, 2007 IRM Test Conditions nC 2–6 APTC60DAM24T1G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60DAM24T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.27 0.55 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTC60DAM24T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTC60DAM24T1G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 280 720 VGS=15&10V 6.5V 560 ID, Drain Current (A) 6V 480 400 5.5V 320 240 5V 160 4.5V 80 4V 0 200 160 120 80 TJ=125°C 40 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 95A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 100 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 80 60 40 20 0 0 40 80 120 160 200 240 280 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 August, 2007 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 4–6 APTC60DAM24T1G – Rev 0 ID, Drain Current (A) 640 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 10000 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 1000000 100000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=95A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) August, 2007 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 95A 2.5 5–6 APTC60DAM24T1G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DAM24T1G APTC60DAM24T1G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=2.5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=2.5Ω TJ=125°C L=100µH 60 50 tr and tf (ns) 40 30 tr 20 td(on) 20 10 0 0 0 20 40 60 80 100 120 140 160 0 20 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy (mJ) Eoff 2 1 3 Eoff Eon 2 1 0 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) 0 Operating Frequency vs Drain Current 250 ZVS 200 ZCS 150 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 100 hard switching 50 0 10 20 30 40 50 60 70 ID, Drain Current (A) 80 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 300 5 Gate Resistance (Ohms) 90 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 August, 2007 Switching Energy (mJ) Eon VDS=400V ID=95A TJ=125°C L=100µH 4 0 Frequency (kHz) 80 100 120 140 160 5 VDS=400V RG=2.5Ω TJ=125°C L=100µH 3 60 ID, Drain Current (A) Switching Energy vs Current 4 tf APTC60DAM24T1G – Rev 0 td(on) and td(off) (ns) 120