MICROSEMI APTM100UM45DAG

APTM100UM45DAG
VDSS = 1000V
RDSon = 45mΩ typ @ Tj = 25°C
ID = 215A @ Tc = 25°C
Single switch
with Series diode
MOSFET Power Module
SK
S
D
G
DK
S
DK
Application
• Zero Current Switching resonant mode
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
D
SK
G
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
215
160
860
±30
52
5000
30
50
3200
Unit
V
A
V
mΩ
W
A
May, 2008
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APTM100UM45DAG – Rev 3
Symbol
VDSS
APTM100UM45DAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 107.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Typ
45
3
Max
600
3
52
5
±600
Unit
µA
mA
mΩ
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 215A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
42.7
7.6
1.3
nF
1602
nC
204
1038
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 215A
RG = 0.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 215A, RG = 0.5Ω
18
14
140
ns
55
7.2
mJ
4.3
12
mJ
5.8
Series diode ratings and characteristics
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1200V
Min
1200
Tj = 25°C
Tj = 125°C
IF = 360A
VR = 800V
di/dt = 1200A/µs
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Max
600
2000
Tj = 125°C
360
2.5
3
1.8
Tj = 25°C
265
Tj = 125°C
350
Tj = 25°C
3.3
Tj = 125°C
17.3
Tj = 80°C
IF = 360A
IF = 720A
IF = 360A
Typ
Unit
V
µA
A
3
V
May, 2008
IRM
Test Conditions
ns
µC
2–6
APTM100UM45DAG – Rev 3
Symbol Characteristic
VRRM Maximum Repetitive Reverse Voltage
APTM100UM45DAG
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To Heatsink
For teminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.025
0.16
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3–6
APTM100UM45DAG – Rev 3
May, 2008
SP6 Package outline (dimensions in mm)
APTM100UM45DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.03
0.025
0.9
0.02
0.7
0.015
0.5
0.01
0.3
0.005
Single Pulse
0.1
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
720
540
VGS=15, 10V
7V
420
ID, Drain Current (A)
6.5V
360
300
240
6V
180
120
5.5V
60
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
480
360
TJ=25°C
240
120
TJ=125°C
5V
0
0
5
10
15
20
25
30
0
VDS, Drain to Source Voltage (V)
Normalized to
VGS=10V @ 107.5A
1.3
1.2
1.1
VGS=10V
VGS=20V
1
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
240
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.9
0.8
210
180
150
120
90
60
30
0
0
120
240
360
480
ID, Drain Current (A)
25
50
75
100
125
150
May, 2008
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
TC, Case Temperature (°C)
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4–6
APTM100UM45DAG – Rev 3
ID, Drain Current (A)
480
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=107.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDSon
1ms
100
10
0.6
Single pulse
TJ=150°C
TC=25°C
10ms
1
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
Ciss
Coss
10000
Crss
1000
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=215A
TJ=25°C
12
10
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
0
350
700
1050 1400 1750 2100
Gate Charge (nC)
May, 2008
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
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5–6
APTM100UM45DAG – Rev 3
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM45DAG
APTM100UM45DAG
Delay Times vs Current
Rise and Fall times vs Current
100
td(off)
120
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
90
60
td(on)
30
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
80
tr and tf (ns)
td(on) and td(off) (ns)
150
60
40
tr
20
0
0
80 120 160 200 240 280 320 360 400
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
20
16
Eoff
12
VDS=670V
ID=215A
TJ=125°C
L=100µH
36
Eon
Switching Energy (mJ)
Switching Energy (mJ)
24
8
4
0
30
24
Eoff
18
Eon
12
Eoff
6
0
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
0
ZCS
Hard
switching
0
20
50
80
110
140
170
3
4
5
6
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
400
200
2
1000
VDS=670V
D=50%
RG=0.5Ω
TJ=125°C
TC=75°C
600
1
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
800
Frequency (kHz)
tf
200
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6–6
APTM100UM45DAG – Rev 3
May, 2008
ID, Drain Current (A)
TJ=150°C
100