APTM120A29FTG Phase Leg MOSFET Power Module VBUS VDSS = 1200V RDSon = 290mΩ typ @ Tj = 25°C ID = 34A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NT C2 Q1 G1 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration OUT Q2 G2 S2 G2 S2 VB US 0/VBUS NT C1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT OUT S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 34 25 136 ±30 348 780 22 50 3000 Unit V A V mΩ W A July, 2006 0/VBUS mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120A29FTG– Rev 1 S1 APTM120A29FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 17A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 290 3 Min VGS = 10V VBus = 600V ID = 34A Typ 10.3 1.54 0.26 374 Unit Max Unit µA mΩ V nA nF nC 240 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 34A R G = 2.5Ω 15 45 1980 µJ 1371 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5Ω Test Conditions ns 160 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 34A, R G = 2.5Ω 3131 µJ 1714 Min Typ Tj = 25°C Max 34 25 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 34A IS = - 34A VR = 600V diS/dt = 200A/µs Max 350 1500 348 5 ±150 48 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 4 Tj = 125°C 14 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 34A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM120A29FTG– Rev 1 Symbol APTM120A29FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Max 0.16 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120A29FTG– Rev 1 July, 2006 SP4 Package outline (dimensions in mm) APTM120A29FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.3 0.06 0.04 Single Pulse 0.1 0.05 0.02 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 160 100 80 7V 6.5V 60 40 6V 20 5.5V 5 10 15 20 25 120 100 80 60 TJ=25°C 40 20 5V 0 0 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 ID, Drain Current (A) T J=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 VGS=20V 0.9 0.8 30 20 10 0 0 20 40 60 80 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1.1 1 3 40 Normalized to VGS=10V @ 17A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 4–6 APTM120A29FTG– Rev 1 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=17A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs 100 limited by RDS on 1ms 10 10ms Single pulse TJ =150°C TC=25°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 14 I D=34A TJ=25°C 12 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) V DS=240V VDS=600V 8 V DS =960V 6 4 2 0 0 80 160 240 320 400 480 Gate Charge (nC) July, 2006 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120A29FTG– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120A29FTG APTM120A29FTG Delay Times vs Current t d(off) V DS =800V RG =2.5Ω T J=125°C L=100µH 150 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG =2.5Ω T J=125°C L=100µH 90 60 40 tr 20 td(on) 30 0 0 10 20 30 40 50 60 70 10 20 I D, Drain Current (A) 60 70 7 VDS=800V RG=2.5Ω TJ=125°C L=100µH 5 4 Eon Switching Energy (mJ) Switching Energy (mJ) 30 40 50 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 6 Eoff 3 2 1 0 VDS=800V ID=34A TJ=125°C L=100µH 6 5 Eoff 4 Eon 3 Eoff 2 1 10 20 30 40 50 60 I D, Drain Current (A) 70 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 225 200 ZCS 175 Frequency (kHz) tf 150 125 ZVS 100 VDS=800V D=50% RG=2.5Ω T J=125°C T C=75°C 75 50 25 Hard switching 0 12 16 20 24 28 ID, Drain Current (A) T J=150°C T J=25°C 10 1 32 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120A29FTG– Rev 1 July, 2006 8 100