800V
52A
APT8014L2FLL
*G
POWER MOS 7
R
0.16Ω
Ω
APT8014L2FLLG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
FREDFET
TO-264
Max
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
D
G
S
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8014L2FLL(G)
UNIT
800
Volts
Drain-Source Voltage
52
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
893
Watts
Linear Derating Factor
7.14
W/°C
PD
TJ,TSTG
208
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
52
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 26A)
TYP
MAX
UNIT
Volts
0.160
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
5-2006
Characteristic / Test Conditions
050-7104 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8014L2FLL(G)
Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 52A @ 25°C
RG = 0.6Ω
15
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
1091
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 533V, VGS = 15V
nC
ns
1135
ID = 52A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
6
µJ
1662
VDD = 533V VGS = 15V
ID = 52A, RG = 3Ω
UNIT
pF
248
285
30
170
20
19
69
VDD = 400V
Fall Time
MAX
7238
1402
ID = 52A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
1383
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
208
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -52A)
1.3
Volts
18
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
52
5
t rr
Reverse Recovery Time
(IS = -52A, di/dt = 100A/µs)
Tj = 25°C
440
Tj = 125°C
1100
Q rr
Reverse Recovery Charge
(IS = -52A, di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
13
IRRM
Peak Recovery Current
(IS = -52A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
30
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.14
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.14
0.9
0.12
0.7
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7104 Rev B
5-2006
0.16
0.08
0.06
0.3
0.04
0
t1
t2
Duty Factor D = t1/t2
0.02
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 2.37mH, RG = 25Ω, Peak IL = 52A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID52A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.10
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0509
0.0894
Dissipated Power
(Watts)
0.0522
0.988
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ID, DRAIN CURRENT (AMPERES)
TC ( C)
ZEXT
TJ ( C)
100
80
TJ = -55°C
60
TJ = +25°C
40
20
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
6V
60
5.5V
40
5V
20
1.40
NORMALIZED TO
V
= 10V @ 26A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
2.5
I
D
V
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 26A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
80
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5-2006
ID, DRAIN CURRENT (AMPERES)
40
0.0
-50
6.5V
100
1.15
60
50
8V
7V
050-7104 Rev B
0
TJ = +125°C
VGS =15 & 10V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
120
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
APT8014L2FLL(G)
140
100
10,000
100µS
50
10
1mS
5
100
= 52A
12
VDS= 160V
VDS= 400V
VDS= 640V
8
4
0
0
50
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
D
Coss
1,000
Crss
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
Ciss
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
APT8014L2FLL(G)
20,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
208
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
160
V
td(off)
140
= 533V
DD
R
G
120
= 3Ω
T = 125°C
J
V
100
DD
R
G
J
L = 100µH
60
td(on)
0
10
20
V
DD
R
G
30
40
50
60
70
80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12000
= 533V
I
10000
T = 125°C
J
L = 100µH
EON includes
diode reverse recovery.
1500
Eon
1000
Eoff
500
0
10
20
30
40
50
60
70
80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20
V
= 3Ω
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
5-2006
tr
0
10
40
50
60
70
80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
050-7104 Rev B
60
20
20
2000
80
40
40
2500
tf
= 533V
= 3Ω
T = 125°C
80
3000
L = 100µH
100
tr and tf (ns)
td(on) and td(off) (ns)
120
DD
D
30
= 533V
= 52A
Eoff
T = 125°C
J
L = 100µH
E ON includes
8000
diode reverse recovery.
6000
4000
Eon
2000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8014L2FLL(G)
10 %
90%
Gate Voltage
TJ = 125 C
T = 125 C
J
t
d(off)
td(on)
Drain Voltage
90%
90%
tr
5%
t
f
5%
10%
10 %
Switching Energy
Switching Energy
Drain Current
0
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2006
2.29 (.090)
2.69 (.106)
050-7104 Rev B
Drain
5.79 (.228)
6.20 (.244)