APT50M50JFLL
500V
POWER MOS 7
R
71A
FREDFET
0.050Ω
S
S
27
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M50JLL
UNIT
500
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
284
TL
EAS
71
-55 to 150
°C
300
Amps
71
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 35.5A)
TYP
MAX
Volts
0.050
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
3-2004
Characteristic / Test Conditions
050-7117 Rev B
Symbol
APT50M50JFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
ID = 71A @ 25°C
RG = 0.6Ω
10
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
1000
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
VDD = 333V, VGS = 15V
6
ID = 71A, RG = 3Ω
1040
INDUCTIVE SWITCHING @ 125°C
1580
VDD = 333V VGS = 15V
ID = 71A, RG = 3Ω
UNIT
pF
105
200
50
105
24
18
55
VDD = 250V
Fall Time
MAX
10550
2060
ID = 71A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
Test Conditions
nC
ns
µJ
1160
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
2
Peak Diode Recovery
dt
dv/
MAX
71
Continuous Source Current (Body Diode)
1
dv/
MIN
UNIT
Amps
(Body Diode)
284
(VGS = 0V, IS = -71A)
1.3
Volts
15
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -71A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -71A, di/dt = 100A/µs)
Tj = 25°C
2.6
Tj = 125°C
10
IRRM
Peak Recovery Current
(IS = -71A, di/dt = 100A/µs)
Tj = 25°C
17
Tj = 125°C
34
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.21
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
Note:
0.5
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7117 Rev B
3-2004
0.25
0.15
0.3
Duty Factor D = t1/t2
0.1
0
Peak TJ = PDM x ZθJC + TC
0.05
10-5
t1
t2
0.05
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 1.27mH, RG = 25Ω, Peak IL = 71A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -71A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
200
RC MODEL
0.142
0.0189
0.0273F
0.469F
44.2F
Case temperature
ID, DRAIN CURRENT (AMPERES)
Power
(Watts)
15 &10V
7.5V
180
Junction
temp. ( ”C)
0.0492
APT50M50JFLL
160
7V
140
120
6.5V
100
80
6V
60
40
5.5V
20
5V
ID, DRAIN CURRENT (AMPERES)
140
120
100
TJ = -55°C
TJ = +125°C
80
TJ = +25°C
60
40
20
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
80
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
0
25
I
= 35.5A
V
= 10V
D
GS
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
D
1.2
1.1
VGS=10V
1.0
VGS=20V
0.9
0.8
0
20
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 35.5A
GS
1.3
1.15
70
0.0
-50
V
1.1
1.0
0.9
0.8
3-2004
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7117 Rev B
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
356
100
100µS
10
1mS
= 71A
VDS=100V
12
VDS=250V
VDS=400V
8
4
0
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
TJ =+150°C
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
= 333V
DD
R
G
= 3Ω
T = 125°C
tf
J
120
td(off)
V
DD
R
G
= 333V
tr and tf (ns)
80
= 3Ω
T = 125°C
J
60
L = 100µH
40
L = 100µH
100
80
60
40
20
30
50
70
90
0
10
110
70
90
110
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
2500
7000
= 333V
= 3Ω
J
SWITCHING ENERGY (µJ)
diode reverse recovery.
1500
Eon
Eoff
500
0
10
DD
I
D
50
= 333V
= 71A
T = 125°C
J
E ON includes
1000
30
V
6000
T = 125°C
L = 100µH
2000
tr
20
td(on)
0
10
3000
TJ =+25°C
10
140
100
td(on) and td(off) (ns)
100
160
120
SWITCHING ENERGY (µJ)
Crss
100
10
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
Coss
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
3-2004
Ciss
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
050-7117 Rev B
APT50M50JFLL
30,000
Eoff
L = 100µH
EON includes
5000
diode reverse recovery.
4000
3000
2000
Eon
1000
30
50
70
90
110
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT50M50JFLL
Gate Voltage
10%
90%
Gate Voltage
td(off)
TJ125°C
T 125°C
J
tf
td(on)
90%
Drain Voltage
90%
Drain Current
tr
10%
5%
10%
5%
Drain Current
Switching Energy
0
Switching Energy
Drain Voltage
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7117 Rev B
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)