APT50M38JLL
500V 88A 0.038Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M38JLL
UNIT
500
Volts
Drain-Source Voltage
88
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
352
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
88
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 44A)
TYP
MAX
Volts
0.038
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
4-2004
Characteristic / Test Conditions
050-7020 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M38JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2540
Reverse Transfer Capacitance
f = 1 MHz
125
VGS = 10V
270
VDD = 250V
70
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 88A @ 25°C
td(off)
tf
22
VDD = 250V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
4
INDUCTIVE SWITCHING @ 25°C
6
1295
VDD = 333V, VGS = 15V
6
ns
50
ID = 88A @ 25°C
Fall Time
nC
17
VGS = 15V
Turn-off Delay Time
pF
140
RESISTIVE SWITCHING
Rise Time
UNIT
12000
VGS = 0V
3
MAX
ID = 88A, RG = 5Ω
940
INDUCTIVE SWITCHING @ 125°C
1875
VDD = 333V VGS = 15V
ID = 88A, RG = 5Ω
µJ
1165
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
TYP
88
352
(Body Diode)
1.3
(VGS = 0V, IS = -88A)
t rr
Reverse Recovery Time (IS = -88A, dl S/dt = 100A/µs)
880
Q rr
Reverse Recovery Charge (IS = -88A, dlS/dt = 100A/µs)
31.0
dv/
Peak Diode Recovery
dt
MAX
UNIT
Amps
Volts
ns
µC
8
V/ns
MAX
UNIT
dv/
5
dt
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 0.93mH, R = 25Ω, Peak I = 88A
j
G
L
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18
0.9
0.14
0.7
0.12
0.10
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7020 Rev D
4-2004
0.20
0.16
0.3
0.06
t2
0.1
0.02
0
Peak TJ = PDM x ZθJC + TC
0.05
10-5
t1
Duty Factor D = t1/t2
0.04
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT50M38JLL
300
15 &10V
0.0244
Power
(Watts)
0.0731F
0.133
0.701F
0.0218
20.1F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. ( ”C)
8V
250
7.5V
200
7V
150
6.5V
100
6V
50
Case temperature
5.5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
200
150
TJ = -55°C
TJ = +125°C
100
TJ = +25°C
50
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
70
60
50
40
30
20
10
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
1.2
VGS=10V
1.1
1.0
VGS=20V
0.9
0.8
0
20 40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
2.5
I
V
D
1.00
0.95
0.90
0.85
-50
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
1.2
= 44A
GS
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
GS
1.3
1.15
90
0
NORMALIZED TO
= 10V @ 44A
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
0
1.4
050-7020 Rev D
ID, DRAIN CURRENT (AMPERES)
250
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100µS
100
1mS
10
10mS
= 88A
D
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
td(off)
V
DD
R
G
80
= 5Ω
J
L = 100µH
60
40
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DD
G
= 333V
= 5Ω
T = 125°C
J
tf
60
40
td(on)
20
40
V
DD
R
G
60
80
100
120
140
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
60
Eoff
3000
L = 100µH
E ON includes
diode reverse recovery.
Eon
2000
1500
1000
Eoff
500
60
80
100
120
140
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
J
40
40
3500
= 333V
= 5Ω
T = 125°C
0
20
tr
0
20
80
100
120
140
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
SWITCHING ENERGY (µJ)
TJ =+25°C
80
= 333V
T = 125°C
0
20
4-2004
TJ =+150°C
100
20
050-7020 Rev D
100
L = 100µH
100
2500
400
R
tr and tf (ns)
td(on) and td(off) (ns)
120
3000
Crss
100
120
140
3500
1,000
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Coss
10
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Ciss
10,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
APT50M38JLL
40,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
352
2500
Eon
2000
1500
V
DD
1000
I
D
= 333V
= 88A
T = 125°C
J
L = 100µH
EON includes
500
0
diode reverse recovery.
0
5
10
15
20
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT50M38JLL
90%
10%
Gate Voltage
TJ125°C
Gate Voltage
td(off)
td(on)
TJ125°C
90%
Drain Voltage
tf
tr
Drain Current
90%
10%
5%
5%
10%
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
0
Drain Current
Figure 19, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
V CE
IC
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7020 Rev D
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)