SILICON MMIC UPCONVERTER UPC8125GR WITH AGC + IQ MODULATOR INTERNAL BLOCK DIAGRAM FEATURES (Top View) • WIDE SUPPLY VOLTAGE RANGE: 2.7 to 5.5 V • OUTPUT FREQUENCY RANGE: 1.8 to 2.0 GHz Reg. Reg. Vcc (MOD) 1 Filter 1 2 19 RFout Filter 2 3 18 GND I 4 17 GND Ib 5 16 Vps Q 6 15 VAGC Qb 7 14 GND Lo1 in 8 • INTERNAL LPF TO REJECT LO & SPURIOUS LEAKAGE • PORTS FOR EXTERNAL IF FILTER • AGC FUNCTION: 40 dB RANGE • POWER SAVE FUNCTION • SMALL 20 PIN SSOP PACKAGE • TAPE AND REEL PACKAGING AVAILABLE 13 Lo2 in x2 Lo1 inb 20 Vcc (Up-con) 9 LPF LPF 12 Lo2 inb 90 deg. Phase Shifter (÷ 2) GND 10 11 GND DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save function. The device was specifically designed for digital mobile communication applications such as 1900 MHz PCS and PHS handsets. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3.0 V, unless otherwise specified) PART NUMBER PACKAGE OUTLINE SYMBOLS UP CONVERTER + QUADRATURE MODULATOR TOTAL ICC PARAMETERS AND CONDITIONS Total Circuit Current (no input signal) UPC8125GR S20 (SSOP 20) UNITS MIN TYP mA 36 µA 0.3 MAX ICC(PS) Total Circuit Current at Sleep Mode VPS ≤ 0.5 V (Low) PRFout 1 Total Output Power 1 VAGC = 3.0 V dBm -10 PRFout 2 Total Output Power 2 VAGC = 0.5 V dBm -50 LOL Lo Carrier Leak fLO1 + fLO2 dBc -37 -30 ImR Image Rejection (Side Band leak) dBc -35 -30 IM3 I/Q I/Q 3rd Order Intermodulation Distortion2 dBc -50 -30 GCR AGC Amp. Gain control range VAGC = 3 V to 0.5 V dB TPS(RISE) Power Save Rise Time VPS (OFF) → VPS (ON) µS 2 5 TPS (FALL) Power Save Fall Time VPS (ON) → VPS (OFF) µS 2 5 fI/Q = 24 KHZ,I → Ib,Q → Qb kΩ 200 µA 5 Ports2 25 40 ZI/Q Input Impedance I and Q II/Q I/Q Bias Current I → Ib,Q → Qb ZLO1 Lo1 Input VSWR fLO1= 220 MHz to 270 MHz EVM Error Vector Magnitude MOD Pattern : PN9 %rms 2.5 Padj Adjacent Channel Power ∆f = 600 KHZ MOD Pattern : PN9 dBc -68 Notes: 1. PIFIN = -20 dBm 2. VI/Q = 1.5 V (DC) +0.5 Vp-p (AC) 10 1.2:1 California Eastern Laboratories UPC8125GR ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS UNITS RATINGS VCC Supply Voltage PARAMETERS V 6.0 VPS Power Save Control Voltage V 6.0 VAGC AGC Control Voltage PD Power Dissipation2 TOP Operating Temperature TSTG Storage Temperature SYMBOLS V 6.0 mW 430 °C -40 to +85 °C RECOMMENDED OPERATING CONDITIONS Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. 2. TA = 25°C Mounted on a 50x50x1.6 mm double copper clad epoxy glass board. UNITS MIN TYP MAX VCC Supply Voltage V 2.7 3.0 TOP Operating Temperature °C -40 +25 +85 Up Converter RF Frequency GHz 1.8 2.0 fUPCONin Up Converter Input Freq. MHz 220 270 fMODout Modulator Output Frequency 1800 fRFout -55 to +150 PARAMETERS 5.5 fLO1in Lo1 Input Frequency, PLO1in = -10 dBm fLO2in Lo2 Input Frequency, PLO2in = -10 dBm MHz 1500 fI/Qin I/Q Input Frequency, VI/Qin = 500 mVp-p MAX (Single ended) MHz PLO1in Lo1 Input Level dBm (-13) -10 -5 PLO2in Lo2 Input Level dBm (-15) -10 -5 VI/Qin I/Q Input Amplitude, Single ended Input Differential Input DC 10 mVp-p 500 250 Notes: 1. IF frequency range includes Up-Converter IF input, Modulator IF Output and Modulator LO Input Frequency (LO1). 2. VI/QIN = 600 mVp-p maximum. TYPICAL PERFORMANCE CURVES (TA = 25°C) ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. I/Q INPUT VOLTAGE RF OUTPUT POWER vs. I/Q INPUT VOLTAGE -20 -30 ImR -40 IM3I/Q -50 LoL -60 100 200 500 1000 I/Q Input Voltage, VI/Qin (mVp-p) 8 -30 6 I/Q offset -40 4 EVM 2 -50 ∆A ∆φ 0 -60 100 200 500 1000 I/Q Input Voltage, VI/Qin (mVp-p) LOL, ImR, IM3I/Q (dBc) -10 RF Output Power, PRFOUT (dBm) PRFout I/Q offset (dB) Error Vector Magnitude EVM (%rms) Amplitude Error ∆A (%rms) Phase Error ∆ø (˚rms) -20 10 0 UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) 0 PRFout -10 -10 -20 -20 -30 -30 ImR -40 -40 IMSI/Q LoL -50 -50 -60 -60 -70 -10 -30 -40 VAGC = 1.2 V -50 -60 -30 -20 -10 0 LO1 Input Power, PLO1IN (dBm) LO2 Input Power, PLO2IN (dBm) ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. AGC VOLTAGE ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. LO1 INPUT POWER -20 8 6 EVM -40 I/2 offset 4 ∆A -50 2 ∆φ I/Q offset (dB) -30 Error Vector Magnitude EVM (%rms) Amplitude Error ∆A (%rms) Phase Error ∆ø (˚rms) 10 0 1 2 8 -30 6 EVM -40 4 I/Q offset ∆A 2 ∆φ 0 -60 0 -20 -10 LO1 Input Power, PLO1IN (dBm) RF OUTPUT vs. AGC VOLTAGE TYPICAL OUTPUT SPECTRUM 0 -10 Output Power, POUT (dBm) -20 -25 -30 -35 -40 -45 -50 ImR -32.7 dBc -20 -30 -40 IM3I/Q -48.5 dBc LoL -48.3 dBc -50 -60 -70 -80 -90 -55 0.5 0 AGC Voltage, VAGC (V) -15 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 AGC Voltage, VAGC (V) -50 -60 3 -10 RF Output, (dBm) -20 0 10 Error Vector Magnitude EVM (%rms) Amplitude Error ∆A (%rms) Phase Error ∆ø (˚rms) VAGC = 3.0 V -10 -70 -70 -20 0 Frequency, f (MHz) I/Q offset (dB) 0 RF Output Power, PRFOUT (dBm) RF OUTPUT POWER vs. LO2 INPUT POWER LOL, ImR, IMSI/Q (dBc) RF Output Power, PRFOUT (dBm) RF OUTPUT POWER vs. LO1 INPUT POWER UPC8125GR APPLICATION CIRCUIT 1000pF 1 Vcc (MOD) Vcc (UP-CON) 2 Filter1 L1 = 47 nH C1=7pF 3 Filter2 BPF at fMODout = 250 MHz RFout 20 1000pF 19 L2 = 100nH Zo = 50 Ω C3 = 3pF GND 18 4 I GND 17 5 Ib Vps 16 6 Q VAGC 15 100pF Matching circuit at fRFout = 190 MHz 1kΩ 1000pF 1000pF 7 Qb GND 14 1000pF Zo = 50 Ω 8 Lo1in Lo2in 13 9 Lo1inb Lo2inb 12 GND 11 100pF RAGC Matching circuit at fLo2in = 1650 MHz C2=3pF 1000pF 100pF 100pF 10 GND APPLICATION CIRCUIT (PHS) DEMO RX ÷N I Q PLL SW PLL UPC8125GR I 0° TX PA 90° Filter Q UPC8125GR PACKAGE DIMENSIONS (Units in mm) PACKAGE OUTLINE SSOP 20 20 11 N 3° 1 7.00 MAX +7° - 3° 10 6.4±0.2 4.4±0.1 1.0±0.2 1.5 ±0.1 +0.10 0.16 -0.05 1.8 MAX 0.1 ±0.1 0.5±0.2 0.65 0.575 MAX +0.10 0.22 - 0.05 ORDERING INFORMATION PART NUMBER QUANTITY UPC8125GR-E1 2500/Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -7/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE