NEC UPC8125

SILICON MMIC UPCONVERTER
UPC8125GR
WITH AGC + IQ MODULATOR
INTERNAL BLOCK DIAGRAM
FEATURES
(Top View)
• WIDE SUPPLY VOLTAGE RANGE: 2.7 to 5.5 V
• OUTPUT FREQUENCY RANGE: 1.8 to 2.0 GHz
Reg.
Reg.
Vcc (MOD)
1
Filter 1
2
19 RFout
Filter 2
3
18 GND
I
4
17 GND
Ib
5
16 Vps
Q
6
15 VAGC
Qb
7
14 GND
Lo1 in
8
• INTERNAL LPF TO REJECT LO & SPURIOUS
LEAKAGE
• PORTS FOR EXTERNAL IF FILTER
• AGC FUNCTION: 40 dB RANGE
• POWER SAVE FUNCTION
• SMALL 20 PIN SSOP PACKAGE
• TAPE AND REEL PACKAGING AVAILABLE
13 Lo2 in
x2
Lo1 inb
20 Vcc (Up-con)
9
LPF LPF
12 Lo2 inb
90 deg. Phase
Shifter (÷ 2)
GND 10
11 GND
DESCRIPTION
The UPC8125GR is a Silicon MMIC manufactured with the
NESAT IIITM silicon bipolar process. The IC consists of a 1.8 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ
modulator. The device operates over a wide 2.7 - 5.5 V supply
voltage range and features a power save function. The device
was specifically designed for digital mobile communication
applications such as 1900 MHz PCS and PHS handsets.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3.0 V, unless otherwise specified)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
UP CONVERTER + QUADRATURE MODULATOR TOTAL
ICC
PARAMETERS AND CONDITIONS
Total Circuit Current (no input signal)
UPC8125GR
S20 (SSOP 20)
UNITS
MIN
TYP
mA
36
µA
0.3
MAX
ICC(PS)
Total Circuit Current at Sleep Mode
VPS ≤ 0.5 V (Low)
PRFout 1
Total Output Power 1
VAGC = 3.0 V
dBm
-10
PRFout 2
Total Output Power 2
VAGC = 0.5 V
dBm
-50
LOL
Lo Carrier Leak
fLO1 + fLO2
dBc
-37
-30
ImR
Image Rejection (Side Band leak)
dBc
-35
-30
IM3 I/Q
I/Q 3rd Order Intermodulation Distortion2
dBc
-50
-30
GCR
AGC Amp. Gain control range
VAGC = 3 V to 0.5 V
dB
TPS(RISE)
Power Save Rise Time
VPS (OFF) → VPS (ON)
µS
2
5
TPS (FALL)
Power Save Fall Time
VPS (ON) → VPS (OFF)
µS
2
5
fI/Q = 24 KHZ,I → Ib,Q → Qb
kΩ
200
µA
5
Ports2
25
40
ZI/Q
Input Impedance I and Q
II/Q
I/Q Bias Current
I → Ib,Q → Qb
ZLO1
Lo1 Input VSWR
fLO1= 220 MHz to 270 MHz
EVM
Error Vector Magnitude
MOD Pattern : PN9
%rms
2.5
Padj
Adjacent Channel Power
∆f = 600 KHZ
MOD Pattern : PN9
dBc
-68
Notes:
1. PIFIN = -20 dBm
2. VI/Q = 1.5 V (DC) +0.5 Vp-p (AC)
10
1.2:1
California Eastern Laboratories
UPC8125GR
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
UNITS
RATINGS
VCC
Supply Voltage
PARAMETERS
V
6.0
VPS
Power Save
Control Voltage
V
6.0
VAGC
AGC Control Voltage
PD
Power Dissipation2
TOP
Operating Temperature
TSTG
Storage Temperature
SYMBOLS
V
6.0
mW
430
°C
-40 to +85
°C
RECOMMENDED
OPERATING CONDITIONS
Notes:
1. Operation in excess of any one of these conditions may
result in permanent damage.
2. TA = 25°C Mounted on a 50x50x1.6 mm double copper
clad epoxy glass board.
UNITS MIN TYP MAX
VCC
Supply Voltage
V
2.7
3.0
TOP
Operating Temperature
°C
-40
+25 +85
Up Converter RF Frequency
GHz
1.8
2.0
fUPCONin
Up Converter Input Freq.
MHz
220
270
fMODout
Modulator Output Frequency
1800
fRFout
-55 to +150
PARAMETERS
5.5
fLO1in
Lo1 Input Frequency,
PLO1in = -10 dBm
fLO2in
Lo2 Input Frequency,
PLO2in = -10 dBm
MHz 1500
fI/Qin
I/Q Input Frequency,
VI/Qin = 500 mVp-p MAX
(Single ended)
MHz
PLO1in
Lo1 Input Level
dBm (-13) -10
-5
PLO2in
Lo2 Input Level
dBm (-15) -10
-5
VI/Qin
I/Q Input Amplitude,
Single ended Input
Differential Input
DC
10
mVp-p
500
250
Notes:
1. IF frequency range includes Up-Converter IF input, Modulator
IF Output and Modulator LO Input Frequency (LO1).
2. VI/QIN = 600 mVp-p maximum.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
ERROR VECTOR MAGNITUDE,
AMPLITUDE ERROR, PHASE ERROR,
AND I/Q OFFSET vs. I/Q INPUT VOLTAGE
RF OUTPUT POWER vs.
I/Q INPUT VOLTAGE
-20
-30
ImR
-40
IM3I/Q
-50
LoL
-60
100
200
500
1000
I/Q Input Voltage, VI/Qin (mVp-p)
8
-30
6
I/Q offset
-40
4
EVM
2
-50
∆A
∆φ
0
-60
100
200
500
1000
I/Q Input Voltage, VI/Qin (mVp-p)
LOL, ImR, IM3I/Q (dBc)
-10
RF Output Power, PRFOUT (dBm)
PRFout
I/Q offset (dB)
Error Vector Magnitude EVM (%rms)
Amplitude Error ∆A (%rms)
Phase Error ∆ø (˚rms)
-20
10
0
UPC8125GR
TYPICAL PERFORMANCE CURVES (TA = 25°C)
0
PRFout
-10
-10
-20
-20
-30
-30
ImR
-40
-40
IMSI/Q
LoL
-50
-50
-60
-60
-70
-10
-30
-40
VAGC = 1.2 V
-50
-60
-30
-20
-10
0
LO1 Input Power, PLO1IN (dBm)
LO2 Input Power, PLO2IN (dBm)
ERROR VECTOR MAGNITUDE,
AMPLITUDE ERROR, PHASE ERROR,
AND I/Q OFFSET vs. AGC VOLTAGE
ERROR VECTOR MAGNITUDE,
AMPLITUDE ERROR, PHASE ERROR,
AND I/Q OFFSET vs. LO1 INPUT POWER
-20
8
6
EVM
-40
I/2 offset
4
∆A
-50
2
∆φ
I/Q offset (dB)
-30
Error Vector Magnitude EVM (%rms)
Amplitude Error ∆A (%rms)
Phase Error ∆ø (˚rms)
10
0
1
2
8
-30
6
EVM
-40
4
I/Q offset
∆A
2
∆φ
0
-60
0
-20
-10
LO1 Input Power, PLO1IN (dBm)
RF OUTPUT vs. AGC VOLTAGE
TYPICAL OUTPUT SPECTRUM
0
-10
Output Power, POUT (dBm)
-20
-25
-30
-35
-40
-45
-50
ImR
-32.7 dBc
-20
-30
-40
IM3I/Q
-48.5 dBc
LoL
-48.3 dBc
-50
-60
-70
-80
-90
-55
0.5
0
AGC Voltage, VAGC (V)
-15
0.7 0.9 1.1
1.3 1.5 1.7
1.9
2.1 2.3 2.5
AGC Voltage, VAGC (V)
-50
-60
3
-10
RF Output, (dBm)
-20
0
10
Error Vector Magnitude EVM (%rms)
Amplitude Error ∆A (%rms)
Phase Error ∆ø (˚rms)
VAGC = 3.0 V
-10
-70
-70
-20
0
Frequency, f (MHz)
I/Q offset (dB)
0
RF Output Power, PRFOUT (dBm)
RF OUTPUT POWER vs.
LO2 INPUT POWER
LOL, ImR, IMSI/Q (dBc)
RF Output Power, PRFOUT (dBm)
RF OUTPUT POWER vs.
LO1 INPUT POWER
UPC8125GR
APPLICATION CIRCUIT
1000pF
1
Vcc (MOD)
Vcc (UP-CON)
2 Filter1
L1 = 47 nH
C1=7pF
3 Filter2
BPF at fMODout = 250 MHz
RFout
20
1000pF
19
L2 = 100nH
Zo = 50 Ω
C3 = 3pF
GND
18
4
I
GND
17
5
Ib
Vps
16
6
Q
VAGC
15
100pF
Matching circuit
at fRFout = 190 MHz
1kΩ
1000pF
1000pF
7
Qb
GND
14
1000pF
Zo = 50 Ω
8
Lo1in
Lo2in
13
9
Lo1inb
Lo2inb
12
GND
11
100pF
RAGC
Matching circuit
at fLo2in = 1650 MHz
C2=3pF
1000pF
100pF
100pF
10
GND
APPLICATION CIRCUIT
(PHS)
DEMO
RX
÷N
I
Q
PLL
SW
PLL
UPC8125GR
I
0°
TX
PA
90°
Filter
Q
UPC8125GR
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE SSOP 20
20
11
N
3°
1
7.00 MAX
+7°
- 3°
10
6.4±0.2
4.4±0.1
1.0±0.2
1.5 ±0.1
+0.10
0.16 -0.05
1.8 MAX
0.1 ±0.1
0.5±0.2
0.65
0.575 MAX
+0.10
0.22 - 0.05
ORDERING INFORMATION
PART NUMBER
QUANTITY
UPC8125GR-E1
2500/Reel
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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PRINTED IN USA ON RECYCLED PAPER -7/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE