SILICON MMIC UPCONVERTER UPC8125GR WITH AGC + IQ MODULATOR INTERNAL BLOCK DIAGRAM FEATURES • WIDE SUPPLY VOLTAGE RANGE: 2.7 to 5.5 V Reg. Reg. Vcc (MOD) 1 Filter 1 2 19 RFout Filter 2 3 18 GND • PORTS FOR EXTERNAL IF FILTER I 4 17 GND • AGC FUNCTION: 40 dB RANGE – I 5 16 Vps Q • OUTPUT FREQUENCY RANGE: 1.8 to 2.0 GHz • INTERNAL LPF TO REJECT LO & SPURIOUS LEAKAGE • POWER SAVE FUNCTION 6 15 VAGC – Q 7 14 GND Lo1 in 8 • SMALL 20 PIN SSOP PACKAGE • TAPE AND REEL PACKAGING AVAILABLE 20 Vcc (Up-con) 13 Lo2 in x2 Lo1 in 9 GND LPF LPF 12 Lo2 in 90 deg. Phase Shifter (÷ 2) 10 11 GND DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESATTM III silicon bipolar process. The IC consists of a 1.8 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save function. The device was specifically designed for digital mobile communication applications such as 1900 MHz PCS and PHS handsets. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = VPS = 3.0 V, unless otherwise specified) PART NUMBER PACKAGE OUTLINE SYMBOLS UP CONVERTER + QUADRATURE MODULATOR TOTAL ICC PARAMETERS AND CONDITIONS Total Circuit Current (no input signal) UPC8125GR S20 (SSOP 20) UNITS MIN TYP MAX mA 30 36 48 0.3 10 -9 -5 ICC(PS) Total Circuit Current at Sleep Mode VPS ≤ 0.5 V (Low) µA PRFout 1 Total Output Power 1 VAGC = 3.0 V dBm PRFout 2 Total Output Power 2 VAGC = 0.5 V dBm -50 LOL Lo Carrier Leak1 fLO1 + fLO2 dBc -37 -30 ImR Image Rejection (Side Band leak)1 dBc -35 -30 IM3 I/Q I/Q 3rd Order Intermodulation Distortion1 dBc -50 -30 GCR AGC Amp. Gain control range VAGC = 2.5 V to 0 V dB TPS(RISE) Power Save Rise Time VPS (OFF) → VPS (ON) µS 2 5 TPS (FALL) Power Save Fall Time VPS (ON) → VPS (OFF) µS 5 10 ZI/Q Input Impedance I and Q Ports fI/Q = 24 kHZ, I → I, Q → Q kΩ 200 II/Q I/Q Bias Current I → I, Q → Q µA 5 -13 28 40 ZLO1 Lo1 Input VSWR fLO1= 220 MHz to 270 MHz EVM Error Vector Magnitude MOD Pattern : PN9 %rms 1.2:1 2.5 4.5 Padj Adjacent Channel Power ∆f = 600 KHZ MOD Pattern : PN9 dBc -68 -60 Notes: 1. VI/Q = 1.5 V (DC) +0.5 Vp-p (AC) California Eastern Laboratories UPC8125GR ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS UNITS RATINGS VCC Supply Voltage PARAMETERS V 6.0 VPS Power Save Control Voltage V 6.0 VAGC AGC Control Voltage PD Power Dissipation2 TOP Operating Temperature TSTG Storage Temperature SYMBOLS V 6.0 mW 430 °C -40 to +85 °C RECOMMENDED OPERATING CONDITIONS -55 to +150 UNITS MIN TYP MAX VCC Supply Voltage V 2.7 3.0 TOP Operating Temperature °C -40 +25 +85 Up Converter RF Frequency GHz 1.8 2.0 fUPCONin Up Converter Input Freq. 220 270 fMODout Modulator Output Frequency 1800 fRFout Notes: 1. Operation in excess of any one of these conditions may result in permanent damage. 2. TA = 85°C Mounted on a 50x50x1.6 mm double copper clad epoxy glass board. PARAMETERS MHz 5.5 fLO1in Lo1 Input Frequency, PLO1in = -10 dBm fLO2in Lo2 Input Frequency, PLO2in = -10 dBm MHz 1500 fI/Qin I/Q Input Frequency, VI/Qin = 500 mVp-p MAX (Single ended) MHz PLO1in Lo1 Input Level dBm -11.5 -10 -5 PLO2in Lo2 Input Level dBm -5 VI/Qin I/Q Input Amplitude, Single ended Input Differential Input DC 10 -15 -10 mVp-p 500 250 TYPICAL PERFORMANCE CURVES (TA = 25°C, VCC = VPS = VAGC = 3.0 V, I/Q DC Offset = I/Q DC Offset = 1.5 V, I/Q Input Signal = 500 mVp-p (Single-ended), LO1 = 250 MHz, PLO1 = -10 dBm, LO2 = 1650 MHz, PLO2 = -10 dBm, RFOUT = 1900 MHz + fI/Q unless otherwise specified) 8 -30 6 I/Q offset -40 4 EVM 2 -50 ∆A ∆φ 0 -60 100 200 500 1000 I/Q Input Voltage, VI/Qin (mVp-p) I/Q Offset, (dB) Error Vector Magnitude, EVM (%rms) Amplitude Error, ∆A (%rms) Phase Error, ∆ø (˚rms) MOD Pattern: PN9 0 0 PRFout -10 -10 -20 -20 -30 -30 ImR -40 -40 IM3I/Q -50 LoL -50 -60 -60 100 200 500 1000 I/Q Input Voltage, VI/Qin (mVp-p) RF Output Power, PRFOUT (dBm) -20 10 LO Leakage, LOL (dBc) Image Rejection, ImR (dBc) I/Q 3rd Order Intermod. Distortion, IM3I/Q (dBc) OUTPUT POWER, LO LEAKAGE, IMAGE REJECTION AND I/Q 3rd ORDER INTERMODULATION DISTORTION vs. I/Q INPUT VOLTAGE ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR AND I/Q OFFSET vs. I/Q INPUT VOLTAGE UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) -10 -10 -20 -20 -30 -30 ImR -40 -40 IMSI/Q LoL -50 -50 -60 -60 -70 -70 -20 -10 0 -20 -30 -40 VAGC = 1.2 V -50 -60 -30 -20 -10 0 LO1 Input Power, PLO1IN (dBm) LO2 Input Power, PLO2IN (dBm) ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. AGC VOLTAGE ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. LO1 INPUT POWER -20 8 EVM 6 I/Q offset 4 -40 ∆A -50 2 ∆φ I/Q offset (dB) -30 Error Vector Magnitude, EVM (%rms) Amplitude Error, ∆A (%rms) Phase Error, ∆ø (˚rms) 10 0 1 2 8 -30 6 EVM -40 I/Q offset 4 ∆A ∆φ 2 0 -60 0 -50 -60 -20 3 -10 0 AGC Voltage, VAGC (V) LO1 Input Power, PLO1IN (dBm) RF OUTPUT vs. AGC VOLTAGE TYPICAL OUTPUT SPECTRUM -10 0 -10 Output Power, POUT (dBm) -15 -20 RF Output, (dBm) VAGC = 3.0 V -10 -70 10 Error Vector Magnitude, EVM (%rms) Amplitude Error, ∆A (%rms) Phase Error, ∆ø (˚rms) 0 -25 -30 -35 -40 -45 -50 ImR -32.7 dBc -20 -30 IM3I/Q -48.5 dBc -40 LoL -48.3 dBc -50 -60 -70 -80 -90 -55 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 AGC Voltage, VAGC (V) 1897.5 1900 Frequency, f (MHz) 1902.5 I/Q offset (dB) 0 PRFout OUTPUT POWER vs. LO2 INPUT POWER AND VAGC RF Output Power, PRFOUT (dBm) 0 LO Leakage, LOL (dBc) Image Rejection, ImR (dBc) I/Q 3rd Order Intermod. Distortion, IM3I/Q (dBc) RF Output Power, PRFOUT (dBm) OUTPUT POWER, LO LEAKAGE, IMAGE REJECTION AND I/Q 3rd ORDER INTERMODULATION DISTORTION vs. LO1 INPUT POWER UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) CIRCUIT CURRENT vs. POWER SAVE VOLTAGE 50 50 40 40 Circuit Current, ICC (mA) Circuit Current, ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 30 20 : TA = +25 °C : TA = -40 °C : TA = +85 °C 10 0 0 1 2 3 4 30 20 : TA = +25 °C : TA = -40 °C : TA = +85 °C 10 0 5 0 1 Supply Voltage, VCC (V) Power Save Circuit Current, ICC(PS) (µA) 50 +25 °C +85 °C 35 30 25 20 15 10 5 Power Save Circuit Current, ICC(PS) (µA) 0 -50 0 50 100 50 45 40 35 30 25 20 15 10 5 0 -50 0 50 100 Operating Temperature, TA (°C) Operating Temperature, TA (°C) POWER SAVE CIRCUIT CURRENT vs. SUPPLY VOLTAGE CIRCUIT CURRENT vs. POWER SAVE VOLTAGE 50 1 0.9 0.8 0.7 5.5 V 0.6 2.7 V 0.5 3.0 V 0.4 0.3 0.2 Circuit Current, ICC (mA) Circuit Current, ICC (mA) 45 -40 °C 3 POWER SAVE CIRCUIT CURRENT vs. OPERATING TEMPERATURE CIRCUIT CURRENT vs. OPERATING TEMPERATURE 40 2 Power Save Voltage, VPS (V) 40 30 20 : VCC = 3.0 V : VCC = 2.7 V : VCC = 5.5 V 10 0.1 0 0 2 3 4 5 Supply Voltage, VCC (V) 6 0 1 2 3 4 5 Power Save Voltage, VPS (V) UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) Output Power, PRFOUT (dBm) PRFout 1 -10 -10 -20 -20 ImR -30 -40 -30 -40 LoL -50 -50 -60 -60 IM3 (I/Q) -70 -40 0 +40 +80 -70 +120 0 0 PRFout 1 -10 -10 -20 -20 -30 -40 -50 -50 -60 -70 0 1 2 3 4 5 6 Supply Voltage, VCC (V) OUTPUT POWER vs. AGC CONTROL VOLTAGE 0 0 -10 Output Power, PRFOUT (dBm) Output Power, PRFOUT (dBm) -60 IM3 (I/Q) OUTPUT POWER vs. AGC CONTROL VOLTAGE GCR = 42.4 dB (VCC = 5.5 V) -20 GCR = 41.2 dB (VCC = 3.0 V) -30 GCR = 41.0 dB (VCC = 2.7 V) -40 : VCC = 3.0 V : VCC = 2.7 V : VCC = 5.5 V -50 -60 -70 0 1 2 3 4 : TA = +25 °C : TA = -40 °C : TA = +85 °C -10 -20 GCR = 37.8 dB (TA = +85 °C) -40 -50 -60 -70 0 5 -10 -10 -20 -20 -30 ImR -30 -40 LoL -40 -50 -50 IM3 (I/Q) -60 -60 2 AGC Control Voltage, VAGC (V) 2 3 3 -70 OUTPUT POWER vs. AGC CONTROL VOLTAGE +10 Output Power, PRFOUT (dBm) PRFout LO Leakage, LOL (dBc) Image Rejection, ImR (dBc) I/Q 3rd Order Intermod. Distortion, IM3I/Q (dBc) 0 0 1 1 AGC Control Voltage, VAGC (V) OUTPUT POWER, LO LEAKAGE, IMAGE REJECTION AND I/Q 3rd ORDER INTERMODULATION DISTORTION vs. AGC CONTROL VOLTAGE 0 GCR = 43.0 dB (TA = -40 °C) GCR = 41.2 dB (TA = +25 °C) -30 AGC Control Voltage, VAGC (V) Output Power, PRFOUT (dBm) -40 LoL Operating Temperature, TA (°C) -70 -30 ImR Slope: 118 dB/V 0 Slope: 41 dB/V -10 RAGC = 80 kΩ -20 RAGC = 10 kΩ -30 -40 -50 -60 -70 0 1 2 AGC Control Voltage, VAGC (V) 3 -70 LO Leakage, LOL (dBc) Image Rejection, ImR (dBc) I/Q 3rd Order Intermod. Distortion, IM3I/Q (dBc) 0 OUTPUT POWER, LO LEAKAGE, IMAGE REJECTION AND I/Q 3rd ORDER INTERMODULATION DISTORTION vs. SUPPLY VOLTAGE Output Power, PRFOUT (dBm) 0 LO Leakage, LOL (dBc) Image Rejection, ImR (dBc) I/Q 3rd Order Intermod. Distortion, IM3I/Q (dBc) OUTPUT POWER, LO LEAKAGE, IMAGE REJECTION AND I/Q 3rd ORDER INTERMODULATION DISTORTION vs. OPERATING TEMPERATURE UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) -10 -20 -20 -30 -30 ImR -40 -40 LOL -50 -50 IM3 (I/Q) -60 -60 -70 -70 -20 -10 0 +10 -30 VAGC = 1.3 V -40 -50 200 500 1000 1200 LO1 x n SPURIOUS LEVEL, OUTPUT POWER vs. SUPPLY VOLTAGE LO1 x n SPURIOUS LEVEL, OUTPUT POWER vs. OPERATING TEMPERATURE -50 -10 -20 PRFout 7fLO1 7fLO1(Image) 8fLO1 8fLO1(Image) 0 -20 I/Q Input Amplitude, VI/QIN (mVP-P) 0 -70 VAGC = 3 V LO1 Input Power, PLO1IN (dBm) -40 -60 -10 -60 100 2 1 -30 3 4 5 LO1 x n Spurious Level, PSUP(L01) (dBc) LO1 x n Spurious Level, PSUP(L01) (dBc) -30 0 -40 0 PRFout 7fLO1 7fLO1(Image) 8fLO1 8fLO1(Image) -50 -10 -60 -20 -70 -30 -40 6 0 +40 +80 +120 Supply Voltage, VCC (V) Operating Temperature, TA (°C) OUTPUT POWER vs. LO2 INPUT LEVEL ADJACENT CHANNEL POWER vs. AGC CONTROL VOLTAGE 0 Adjacent Channel Power, PADJ (dBc) Output Power, PRFOUT (dBm) +10 VAGC = 3V -10 -20 -30 VAGC = 1.3V -40 -50 -60 -70 -40 -30 -20 -10 0 LO2 Input Level, PLO2IN (dBm) +10 MOD pattern: PN9 -40 -50 -60 ∆f = ±600 kHz -70 ∆f = ±900 kHz -80 0 1 2 AGC Control Voltage, VAGC (V) 3 Output Power, PRFOUT (dBm) -10 Output Power, PRFOUT (dBm) Output Power, PRFOUT1 (dBm) PRFout1 OUTPUT POWER vs. I/Q INPUT AMPLITUDE Output Power, PRFOUT (dBm) 0 0 LO Leakage, LOL (dBc) Image Rejection, ImR (dBc) I/Q 3rd Order Intermod. Distortion, IM3I/Q (dBc) OUTPUT POWER, LO LEAKAGE, IMAGE REJECTION AND I/Q 3rd ORDER INTERMODULATION DISTORTION vs. LO1 INPUT POWER UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. AGC CONTROL VOLTAGE Error Vector Magnitude, EVM (%rms) Amplitude Error, ∆A (%rms) Phase Error, ∆ø (Deg.) Adjacent Channel Power, PADJ (dBc) 10 MOD Pattern: PN9 -50 -60 ∆f = ±600 kHz -70 ∆f = ±900 kHz -80 -20 MOD Pattern: PN9 8 -30 I/Q Offset 6 -40 4 EVM -50 ∆A 2 ∆φ 0 100 200 500 2 3 AGC Control Voltage, VAGC (V) ERROR VECTOR MAGNITUDE, AMPLITUDE ERROR, PHASE ERROR, AND I/Q OFFSET vs. I/Q INPUT AMPLITUDE POWER SAVE RISE TIME vs. SUPPLY VOLTAGE -20 -30 I/Q Offset 6 -40 4 EVM ∆A 2 -50 ∆φ I/Q offset, (dB) 8 Power Save Rise Time, TPS(RISE) (µs) 4 MOD Pattern: PN9 0 -60 100 200 500 VPS (Low) ➔ VPS (High) 3 2.7V 2 5.5V 3.0V 1 0 1000 2 3 4 5 I/Q Input Amplitude, VI/QIN (mVP-P) Supply Voltage, VCC (V) POWER SAVE FALL TIME vs. SUPPLY VOLTAGE ERROR VECTOR MAGNITUDE vs. SUPPLY VOLTAGE 8 6 5 VPS (High) ➔ VPS (Low) Error Vector Magnitude, EVM (%rms) Power Save Fall Time, TPS(FALL) (µs) 1 I/Q Input Amplitude, VI/QIN (mVP-P) 10 Error Vector Magnitude, EVM (%rms) Amplitdue Error, ∆A (%rms) Phase Error, ∆ø (Deg.) 0 1000 7 6 5 4 3 2 1 MOD Pattern: PN9 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 3 4 5 Supply Voltage, VCC (V) 6 2 3 4 5 Supply Voltage, VCC (V) 6 I/Q offset, (dB) ADJACENT CHANNEL POWER vs. I/Q INPUT AMPLITUDE UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) ADJACENT CHANNEL POWER vs. SUPPLY VOLTAGE POWER SAVE RISE TIME vs. OPERATING TEMPERATURE 4 MOD Pattern: PN9 ∆f = ±600 kHz -25 Power Save Rise Time, TPS(RISE) (µs) Adjacent Channel Power, PADJ (dBc) -20 -30 -35 -40 -45 -50 -55 -60 -65 -70 3 4 5 3 2.5 +25 °C 2 1.5 1 0.5 6 VPS (Low) ➔ VPS (High) -50 0 50 Supply Voltage, VCC (V) Operating Temperature, TA (°C) POWER SAVE FALL TIME vs. OPERATING TEMPERATURE ERROR VECTOR MAGNITUDE vs. OPERATING TEMPERATURE 10 100 5 VPS (High) ➔ VPS (Low) 9 Error Vector Magnitude, EVM (%rms) Power Save Fall Time, TPS(FALL) (µs) +85 °C 0 2 8 7 6 5 4 3 2 1 0 -50 0 50 100 ADJACENT CHANNEL POWER vs. OPERATING TEMPERATURE 0 -10 MOD Pattern: PN9 ∆f = ±600 kHz -20 -30 -40 -50 -60 -70 -50 0 50 Operating Temperature, TA (°C) MOD Pattern: PN9 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 0 50 Operating Temperature, TA (°C) Operating Temperature, TA (°C) Adjacent Channel Power, PADJ (dBc) -40 °C 3.5 100 100 UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM REF 0.0 dBm 10dB/DIV MKR 1.900 GHz MARKER 1.900 GHz -8.53 dBm 5fLO1 6fLO1 PRFout REF 0.0 dBm 10dB/DIV PRFout A• REF 0.0 GHz fLO2 4fLO1 2fLO1 TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM ImR LoL IM3(I/Q) fLO1 3fLO1 RBW 3 kHz VBW 10 MHz SWP 2.0 s RBW 300 kHz VBW 3 MHz SWP 10 s START 0 GHz STOP 2.500 GHz TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM (IN BAND) (2) (fLO1 = 233.15 MHz, fLO2 = 1662 MHz) TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM (IN BAND) (1) REF 0.0 dBm 10dB/DIV MKR 1.8986 GHz RBW 300 kHz VBW 3 MHz SWP 10 s MARKER 1.8986 GHz -9.38 dBm REF 0.0 dBm 10dB/DIV PRFout 8fLO1 (Image) 1.8 GHz -65.0 dBm 7fLO1 1.75 GHz -69.1 dBm 7fLO1 (Image) 2.05 GHz 8fLO1 LO1 7f -67.5 dBm 2.0 GHz 1.75 GHz -68.0 dBm dBm -69.1 RBW 100 kHz VBW 10 kHz SWP 10 s Frequency Band Width for PHS 1895.15 to 1917.95 MHz RBW 100 kHz VBW 10 kHz SWP 10 s CENTER 1.88000 GHz STOP 1.93000 GHz STOP 2.1500 GHz TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM (IN BAND) (3) (fLO1 = 233.15 MHz, fLO2 = 1684.8 MHz) REF 0.0 dBm PRFout REF 0.0 dBm START 1.6500 GHz REF 0.0 dBm 10dB/DIV MARKER 1.9000274 GHz -8.80 dBm CENTER 1.9000000 GHz SPAN 200.0 kHz MARKER 1.91793 GHz -8.02 dBm PRFout TYPICAL π/4 DQPSK MODULATION OUTPUT SPECTRUM REF -10.0 dBm 10dB/DIV ADJ BS 192 kHz Frequency Band Width for PHS 1895.15 to 1917.95 MHz CENTER 1.88000 GHz STOP 1.93000 GHz DL -10.0 dBm RBW 3 kHz VBW 10 kHz SWP 5.0 s 1 2 CENTER 1.900000 GHz 3 4 SPAN 2.000 MHz 1: 1.899100 GHz -71.00 dB 2: 1.899400 GHz -68.00 dB 3: 1.900600 GHz -68.00 dB 4: 1.900900 GHz -71.25 dB UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C) POWER SAVE RESPONSE (1) (VCC = 2.7 V) ATTEN 10 dB RL 0 dBm 10 dB/ RBW: 2.0 MHz VBW: 3.0 MHz SWP: 50 µs POWER SAVE RESPONSE (3) (VCC = 5.5 V) ATTEN 10 dB RL 0 dBm 10 dB/ RBW: 2.0 MHz VBW: 3.0 MHz SWP: 50 µs POWER SAVE RESPONSE (2) (VCC = 3.0 V) ATTEN 10 dB RL 0 dBm 10 dB/ RBW: 2.0 MHz VBW: 3.0 MHz SWP: 50 µs UPC8125GR TYPICAL PERFORMANCE CURVES (TA = 25°C, VCC = VPS = 3.0 V) LO1 INPUT IMPEDANCE (PIN 8) RF OUTPUT IMPEDANCE (PIN 19) Impedance at Marker 1: 50.00+j0.0 Impedance at Marker 3: 9.145-j84.36 1 Marker: 1: 900 MHz 2: 1.5 GHz 3: 1.9 GHz 3 1 2 Start: 800 MHz Stop: 2000 MHz Start: 50 MHz Stop: 500 MHz LO2 INPUT IMPEDANCE (PIN 13) Impedance at Marker 2: 10.053-j44.05 Marker: 1: 900 MHz 2: 1.65 GHz 3: 1.9 GHz Marker: 1: 250 MHz 2 3 Start: 800 MHz Stop: 2000 MHz 1 UPC8125GR PIN FUNCTIONS Pin No. 1 Symbol Supply Pin Voltage Voltage (V) (V) @ 3 V VCC(MOD.) 2.7 to 5.5 Description — Supply Voltage pin for the modulator. An internal regulator helps keep the device stable against temperature or VCC variation. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. An external BPF installed between these pins can control the LO1 harmonics. 2 Filter 1 – 1.9 3 Filter 2 – 1.9 4 I VCC/2 NOTE – Equivalent Circuit 2 3 19 Input for I signal. This input impedance is 200 kΩ. When used as a single-ended input, the maximum amplitude should be 500 mVP-P. When used as a differential input, the maximum amplitude should be 250 mVP-P. 4 5 2.1 k 5 l VCC/2 NOTE – Input for I signal. This input impedance is 200 kΩ. When used as a single-ended input, a VCC/2 biased DC signal should be input. When used as a differential input, the maximum amplitude is 250 mVP-P. 6 Q VCC/2 NOTE – Input for Q signal. This input impedance is 200 kΩ. When used as a single-ended input, the maximum amplitude should be 500 mVP-P. When used as a differential input, the maximum amplitude should be 250 mVP-P. 2.1 k 2k 6 7 2.1 k 7 Q VCC/2 NOTE – 2.1 k 2k Input for Q signal. This input impedance is 200 kΩ. When used as a single-ended input, a VCC/2 biased DC signal should be input. When used as a differential input, the maximum amplitude is 250 mVP-P. 8 8 LO1IN – 0 LO input for the phase shifter. This input impedance is internally matched to 50 Ω. 9 LO IN – 2.4 Bypass of the LO1 input. This pin should be externally grounded through a capacitor. 10 GND – 0 11 (MOD.) Ground pins for modulator block. These pins should be connected to system ground with minimum inductance. Track length should be kept as short as possible. Note: VCC/2 DC bias must be supplied to I, I, Q, Q. 50 9 UPC8125GR PIN FUNCTIONS Pin No. Symbol Supply Pin Voltage Voltage (V) (V) @ 3 V Description 12 LO2IN – 1.9 Bypass of the LO2 input. This pin should be externally grounded through a capacitor. 13 LO2IN – 1.9 LO input for the up-converter. This pin is high impedance input and should be used with an external matching circuit. Equivalent Circuit 13 14 GND 17 (Up-conv.) – 0 Ground pins for the upconverter block. These pins should be connected to sytem ground with minimum inductance. Track length should be kept as short as possible. 0 to VCC – Gain Control pin. VAGC Up = Gain Up. Adjust value of RAGC to set gain slope. 18 15 VAGC 12 1k 15 k 1k 15 k 15 9k 16 VPS 0 to VCC – VPS (V) ≥2.0 0 to 0.5 19 RFOUT VCC – 16 Power save control pin can control the On/ Sleep state with bias as follows: 1.6 k STATE ON SLEEP RF output from up-converter. This pin is an open collector and requires an external LC matching circuit. 19 2 20 VCC (Up-con.) 2.7 to 5.5 – Supply voltage pin for the up-converter. An internal regulator helps keep the device stable against temperature or VCC variation. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. 3 UPC8125GR APPLICATION CIRCUIT 1000pF 1 Vcc (MOD) Vcc (UP-CON) 2 Filter1 L1 = 47 nH C1=7pF 3 Filter2 BPF at fMODout = 250 MHz RFout 20 1000pF 19 L2 = 100nH Zo = 50 Ω C3 = 3pF GND 18 4 I GND 17 5 I Vps 16 6 Q VAGC 15 100pF Matching circuit at fRFout = 190 MHz 1kΩ 100pF 1000pF 7 Q GND 14 100pF Zo = 50 Ω 8 Lo1in Lo2in 13 9 Lo1in Lo2in 12 10 GND GND 11 100pF RAGC Matching circuit at fLo2in = 1650 MHz C2=3pF 1000pF 100pF 100pF APPLICATION CIRCUIT (PHS) DEMO RX ÷N I Q PLL SW PLL UPC8125GR I 0° TX PA 90° Filter Q UPC8125GR PACKAGE DIMENSIONS (Units in mm) PACKAGE OUTLINE SSOP 20 20 11 N 1 7.00 MAX 10 6.4±0.2 4.4±0.1 1.0±0.1 1.5 ±0.1 +0.10 0.15- 0.05 1.8 MAX 0.1 ±0.1 0.5±0.2 0.65 0.575 MAX +0.10 0.22 - 0.05 ORDERING INFORMATION PART NUMBER QUANTITY UPC8125GR-E1 2500/Reel Notes: 1. Embossed tape, 12 mm wide. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -5/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE