IGBT MODULE PHMB300A6 Single 300A 600V CIRCUIT OUTLINE DRAWING Dimension(mm) Approximate Weight : 500g MAXMUM RATINGS (Tc=25°C) Item Symbol Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time PHMB300A6 VCES VGES IC ICP PC Tj Tstg VISO FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff M4 M6 Unit 600 +/ - 20 300 600 1040 -40 to +150 -40 to +125 2500 3 1.4 3 Test Condition V V A W °C °C V N•m Min. Typ. Max. 4.0 - 2.1 30,000 0.2 0.4 0.2 0.6 3.0 1.0 2.6 8.0 0.4 0.75 0.35 0.8 VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=300A,VGE=15V VCE=5V,IC=300mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 1 ohm RG= 2 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 300 600 A Symbol Test Condition Min. Typ. Max. VF trr IF=300A,VGE=0V IF=300A,VGE=-10V,di/dt=300A/µs - 1.9 0.15 2.4 0.25 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.12 0.24 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PHMB300A6 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ VGE =20V Collector Current I C (A) I C=150A 15V 500 TC=25℃ 16 12V 10V 400 300 9V 200 100 8V Collector to Emitter Voltage V CE (V) 600 600A 14 300A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 300A 12 10 8 6 4 2 0 4 8 12 16 R L=1Ω TC=25℃ 16 350 12 250 10 8 200 VCE =300V 150 6 200V 100 2 50 0 150 300 450 600 750 900 1050 Fig.6- Collector Current vs. Switching Time (Typical) 1 VGE =0V f=1MHZ TC=25℃ 100000 Cies VCC=300V RG=2.0Ω VGE =±15V TC=25℃ 0.9 0.8 Switching Time t (μs) Coes Cres 20000 10000 5000 2000 1000 0.7 toff 0.6 0.5 ton 0.4 0.3 tf 0.2 500 tr 0.1 0.2 0.5 1 2 5 10 20 0 1350 1200 Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Capacitance C (pF) 4 100V 0 20 200000 200 14 300 Gate to Emitter Voltage V GE (V) 50000 20 400 600A 14 0 16 50 Collector to Emitter Voltage V CE (V) 100 200 0 0 50 100 Collector Current IC (A) 150 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) IC=150A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) PHMB300A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 VCC=300V IC=300A VG=±15V TC=25℃ 2 TC=25℃ toff ton 1 tr 0.5 tf 0.2 400 300 200 100 0.1 0.05 0.5 1 2 5 10 20 0 50 0 1 2 Series Gate Impedance R G (Ω) 3 4 Forward Voltage V F (V) Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area (Typical) 1000 500 IF=300A TC=25℃ R G=2.0Ω VGE =±15V TC≦125℃ 500 200 200 Collector Current I C (A) trr 100 50 I RrM 20 100 50 20 10 5 2 1 0.5 10 0.2 400 800 1200 1600 2000 0.1 2400 0 200 -di/dt (A/μs) 400 Fig.11- Transient Thermal Impedance FRD 2x10 -1 IGBT 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25℃ 2x10 -3 1x10 1 Shot Pulse -3 10 -5 600 Collector to Emitter Voltage V CE (V) 5x10 -1 (℃/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ 500 Forward Current I F (A) Switching Time t (μs) (Typical) 600 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 800