2 1 3 4 2 1 Anti-Parallel APT2x100DQ60J 3 4 2 3 1 4 SO Parallel APT2x101DQ60J 2 T- 27 APT2x101DQ60J APT2x100DQ60J 600V 100A 600V 100A "UL Recognized" file # E145592 ISOTOP ® DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode Density MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x101_100DQ60J UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 82°C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 146 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 1000 Operating and StorageTemperature Range 20 mJ -55 to 175 °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 100A 1.6 2.2 IF = 200A 2.05 IF = 100A, TJ = 125°C 1.28 VR = 600V Microsemi Website - http://www.microsemi.com Volts 25 VR = 600V, TJ = 125°C UNIT µA 500 190 pF 9-2009 VF Characteristic / Test Conditions 053-4208 Rev G Symbol DYNAMIC CHARACTERISTICS Symbol APT2x101_100DQ60J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr Qrr IRRM trr Qrr IRRM MIN TYP - 34 - 160 - 290 - 5 - 220 ns - 1530 nC - 13 - 100 ns - 2890 nC - 44 Amps MIN TYP IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C VR = 400V, TC = 25°C Reverse Recovery Time IF = 100A, diF/dt = -200A/µs Reverse Recovery Charge VR = 400V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -1000A/µs Reverse Recovery Charge VR = 400V, TC = 125°C Maximum Reverse Recovery Current UNIT ns IF = 100A, diF/dt = -200A/µs Maximum Reverse Recovery Current MAX nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) oz 29.2 g 0.9 0.35 0.7 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.20 0.3 0.15 t1 t2 0.10 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 0.1 1 9-2009 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4208 Rev G °C/W 1.03 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 .42 Volts Maximum Mounting Torque 0.30 UNIT 2500 Package Weight 0.40 MAX 10 lb•in 1.1 N•m APT2x101_100DQ60J TYPICAL PERFORMANCE CURVES 300 300 TJ = 25°C R trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 250 T =125°C J V =400V 200 TJ = 175°C 150 TJ = 125°C 100 50 250 200A 200 100A 50A 150 100 50 TJ = -55°C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 60 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 4000 T =125°C J V =400V 3500 R 200A 3000 100A 2500 2000 50A 1500 1000 500 200A R 50 40 100A 30 20 50A 10 0 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.4 180 1.2 160 Qrr Duty cycle = 0.5 T =175°C J 140 1 trr 0.6 trr IRRM 120 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) T =125°C J V =400V 0.5 Qrr 0.4 100 80 60 40 0.2 0 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 1400 1000 800 600 400 200 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4208 Rev G 9-2009 CJ, JUNCTION CAPACITANCE (pF) 1200 APT2x101_100DQ60J Vr diF /dt Adjust +18V APT60M75L2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 053-4208 Rev G 9-2009 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2x100DQ60J APT2x101DQ60J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.