TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices 2N3498 2N3498L 2N3499 2N3499L 2N3500 2N3500L Qualified Level JAN JANTX JANTXV JANS 2N3501 2N3501L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temp. Range Symbol 2N3498* 2N3499* 2N3500* 2N3501* VCEO VCBO VEBO IC 100 100 6.0 500 150 150 6.0 300 PT TJ, Tstg 1.0 5.0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C TO-5* 2N3498L, 2N3499L 2N3500L, 2N3501L THERMAL CHARACTERISTICS Characteristics Thermal Resistance: Junction-to-Case Symbol Max. 35 Unit RθJC 0 C/W 175 Junction-to-Ambient RθJA *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly 5.71 W/0C for TA > 250C 2) Derate linearly 28.6 W/0C for TC > 250C TO-39* (TO-205AD) 2N3498, 2N3499 2N3500, 2N3501 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 100 150 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 75 Vdc VCB = 100 Vdc VCB = 150 Vdc Emitter-Base Cutoff Current VEB = 4.0 Vdc VEB = 6.0 Vdc 2N3498, 2N3499 2N3500, 2N3501 2N3498, 2N3499 2N3500, 2N3501 2N3498, 2N3499 2N3500, 2N3501 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Vdc ICBO 50 50 10 10 ηAdc ηAdc µAdc µAdc IEBO 25 10 ηAdc µAdc 120101 Page 1 of 2 2N3498, L, 2N3499, L, 2N3500, L, 2N3501, L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. hFE 20 35 25 50 35 75 40 100 15 20 15 20 Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 300 mAdc, VCE = 10 Vdc IC = 500 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 300 mAdc, IB = 30 mAdc IC = 150 mAdc, IB = 15 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 300 mAdc, IB = 30 mAdc IC = 150 mAdc, IB = 15 mAdc 2N3498, 2N3500 2N3499, 2N3501 2N3498, 2N3500 2N3499, 2N3501 2N3498, 2N3500 2N3499, 2N3501 2N3498, 2N3500 2N3499, 2N3501 2N3500 2N3501 2N3498 2N3499 All Types 2N3498, 2N349 2N3500, 2N3501 All Types 2N3498, 2N3499 2N3500, 2N3501 120 300 VCE(sat) 0.2 0.6 0.4 Vdc VBE(sat) 0.8 1.4 1.2 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 2N3498, 2N3499 2N3500, 2N3501 Input Capacitance VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz 1.5 8.0 Cobo 10 8.0 pF Cibo 80 pF on 115 ηs off 1150 ηs SWITCHING CHARACTERISTICS Turn-On Time VEB = 5 Vdc; IC = 150 mAdc; IB1 = 15 mAdc Turn-Off Time IC = 150 mAdc; IB1 = IB2 = -15 mAdc t t SAFE OPERATING AREA DC Tests TC = +250C, tr ≥ 10 ηs; 1 Cycle, t = 1.0 s Test 1 VCE = 10 Vdc, IC = 500 mAdc 2N3498, 2N3499 VCE = 16.67 Vdc, IC = 300 mAdc 2N3500, 2N3501 Test 2 VCE = 50 Vdc, IC = 100 mAdc All Types Test 3 VCE = 80 Vdc, IC = 40 mAdc All Types Clamped Switching TA = +250C Test 1 IB = 85 mAdc, IC = 500 mAdc 2N3498, 2N3499 IB = 50 mAdc, IC = 300 mAdc 2N3500, 2N3501 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2