2N4033 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching • Low Power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4033J) • JANTX level (2N4033JX) and • JANTXV level (2N4033JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 6700 Reference document: MIL-PRF-19500/512 Benefits • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25°C unless otherwise specified Symbol VCEO Rating 80 Collector-Base Voltage VCBO 80 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts Collector Current, Continuous IC 1 A Power Dissipation, TA = 25°C Derate linearly above 60°C PT 0.8 5.7 RθJA 175 W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N4033 Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts 25 Units µA nA µA nA Emitter-Base Cutoff Current IEBO1 IEBO2 VBE = 5 Volts VBE = 3 Volts 10 25 µA nA Collector-Base Cutoff Current Symbol ICBO1 ICBO2 ICBO3 Test Conditions VCB = 80 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150°C On Characteristics Min Typ Max 10 10 25 Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 VCEsat3 Test Conditions IC = 100 µA, VCE = 5 Volts IC = 100 mA, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts IC = 1 A, VCE = 5 Volts IC = 500 mA, VCE = 5 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1 A, IB = 100 mA Min 50 100 70 25 30 Test Conditions VCE = 10 Volts, IC = 50 mA, f = 100 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 300 0.9 1.2 0.15 0.50 1.00 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Symbol |hFE| Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 1.5 Max Units 6.0 20 pF 80 pF Switching Characteristics Delay Time Rise Time Storage Time Fall Time Copyright 2002 Rev. E td tr ts tf IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA 15 25 175 35 ns ns Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2