MICROSEMI 2N5003

2N5003
Silicon PNP Transistor
Data Sheet
Description
Applications
Complement to the 2N5002
• High-speed power-switching
• Power Transistor
• PNP silicon transistor
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5003J)
• JANTX level (2N5003JX)
• JANTXV level (2N5003JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
Features
• Radiation testing (total dose) upon request
•
•
•
•
Hermetically sealed TO-59 metal can
Also available in chip configuration
Chip geometry 9702
Reference document:
MIL-PRF-19500/535
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
80
Collector-Base Voltage
VCBO
100
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
5.5
Volts
IC
5
A
W
mW/°C
W
mW/°C
RθJA
RθJC
2
11.4
58
331
88
3
TJ
-65 to +200
°C
TSTG
-65 to +200
°C
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Copyright 2002
Rev. C
PT
PT
°C/W
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N5003
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
V(BR)CEO
Collector-Emitter Cutoff Current
ICEO
Collector-Emitter Cutoff Current
ICEX
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Thermal Impedance
Test Conditions
Min
IC = 100 mA
Typ
VCE = 60 Volts, VEB = 2 Volts,
TA = 150°C
VCE = 60 Volts
VCE = 100 Volts
VEB = 4 Volts
VEB = 5.5 Volts
On Characteristics
Units
Volts
50
µA
500
µA
1
1
1
1
3.1
µA
mA
µA
mA
°C/W
80
VCE = 40 Volts
ICES1
ICES2
IEBO1
IEBO2
θJC
Max
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
DC Current Gain
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBE
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 50 mA, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 2.5 A, VCE = 5 Volts
TA = -55°C
VCE = 5 Volts, IC = 2.5 A
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
IC = 2.5 A, IB = 250 mA
IC = 5 A, IB = 500 mA
Min
20
30
20
15
Test Conditions
VCE = 5 Volts, IC = 500 mA,
f = 10 MHz
VCE = 5 Volts, IC = 100 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
90
1.45
1.45
2.20
0.75
1.50
Volts
Volts
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Symbol
|hFE|
hFE
COBO
Typ
Max
Units
250
pF
0.5
1.4
0.5
1.5
µs
6
20
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
Copyright 2002
Rev. C
tON
tr
tf
tOFF
IC = 5 A, IB1=IB2 = 500 mA,
VBE = 3.7 Volts, RL = 6 Ω
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2