SOFT ORANGE Item No.: 180220 1. This specification applies to GaAsP / GaP LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Diffusion n-Epitaxy GaAsP 120 265 n-Epitaxy GaAsP 270 n-Substrate GaP 265 n-Electrode Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage VF IF = 20 mA Reverse current IR VR = 5 V Luminous intensity * IV IF = 20 mA min 3,0 typ max 2,20 2,50 V 10 µA 5,0 Peak wavelength λP IF = 20 mA 610 * On request, wafers will be delivered according to luminous intensity classes Brightness measurement at OSA on gold plate 5. Unit mcd nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. IV typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]