PJP7N65 / PJF7N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 7A , 650V, RDS(ON)=1.4Ω@VGS=10V, ID=3.5A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives ITO-220AB 3S 2 1 D G 3S 12D G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain 3 Source ORDERING INFORMATION 1 TYPE MARKING PACKAGE PACKING PJP7N65 P7N65 TO-220AB 50PCS/TUBE PJF7N65 F7N65 ITO-220AB 50PCS/TUBE Gate Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l P J P 7 N6 5 P J F 7 N6 5 Uni ts D ra i n-S o urc e Vo lta g e V DS 650 V Ga te -S o urc e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urre nt ID 7 7 A P uls e d D ra i n C urre nt 1 ) ID M 28 28 A PD 125 1 .0 45 0 .3 6 W Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e Avalanche Energy with Single Pulse IAS=7A, VDD=50V, L=15.7mΗ T J ,T S TG -5 5 to +1 5 0 E AS 420 O C mJ Junction-to-Case Thermal Resistance R θJ C 1 .0 2 .7 8 O C /W Junction-to Ambient Thermal Resistance R θJ A 6 2 .5 100 O C /W Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.20.2009 PAGE . 1 PJP7N65 / PJF7N65 ELECTRICAL CHARACTERISTICS P a ra me te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS =0 V, I D =2 5 0 uA 650 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 3.5A - 1.1 1.4 Ω I DSS VDS=650V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 2 5 .7 3 6 .2 - 7 .5 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 8.8 - Turn-On D e la y Ti me t d (o n) - 13.2 18.8 Turn-On Ri s e Ti me tr - 18.2 26.5 - 3 3 .6 52 - 1 7 .8 26 - 11 0 0 1450 - 106 150 - 8 16 Turn-Off D e la y Ti me Turn-Off F a ll Ti me t d (o ff) V D S = 5 2 0 V, ID =7 A , V GS =1 0 V VDD=325V, I D =7A V GS =1 0 V, RG=25Ω tf Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 7 .0 A Ma x.P uls e d S o urc e C urre nt I SM - - - 28 A D i o d e F o rwa rd Vo lta g e V SD IS = 7 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t rr - 365 - ns Re ve rs e Re c o ve ry C ha rg e Q rr V GS =0 V, IF = 7 A d i /d t=1 0 0 A /us - 3 .4 - uC NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. STAD-DEC.20.2009 PAGE . 2 PJP7N65 / PJF7N65 16 100 14 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) VGS= 20V~ 6.0V 12 10 8 6 5.0V 4 VDS =40V 10 TJ = 125oC 1 25oC 0.1 2 0 -55oC 0.01 0 5 10 15 20 25 30 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig.2 Transfer Characteristric Fig.1 Output Characteristric 5 2 VGS=10V 1.5 VGS = 20V 1 0.5 0 0 2 4 RDS(ON) - On-Resistance(Normalized) ID =3.5A 4 3 2 TJ =25oC 1 0 6 8 10 12 14 16 18 20 ID - Drain Current (A) Fig.3 On Resistance vs Drain Current 2.5 2.1 RDS(ON) - On Resistance(Ω Ω) 2.5 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.4 On Resistance vs Gate to Source Voltage 2000 VGS =10 V ID =3.5A 1.9 C - Capacitance (pF) RDS(ON) - On Resistance(Ω Ω) 3 2.3 8 f = 1MHz VGS = 0V 1600 Ciss 1200 1.7 1.5 1.3 1.1 0.9 800 400 Coss 0.7 Crss 0 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature STAD-DEC.20.2009 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJP7N65 / PJF7N65 Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 100 ID =7.0A 10 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 12 VDS=520V VDS=325V 8 VDS=130V 6 4 10 TJ = 125oC 1 25oC -55oC 0.1 2 0 0.01 0 5 10 15 20 25 Qg - Gate Charge (nC) 30 Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(Normalized) VGS = 0V 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage 1.2 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature STAD-DEC.20.2009 PAGE. 4 PJP7N65 / PJF7N65 LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-DEC.20.2009 PAGE . 5