PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification • Component are in compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: TO-263 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE MARKING PACKAGE PACKING PJB24N10 B24N10 TO-263 800PCS/REEL Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R S ymb o l Li mit Uni ts D ra i n-S o urc e Vo lta g e V DS 100 V Ga te - S o urc e Vo lta g e V GS +2 0 V ID 42 A ID M 160 A PD 105 0 .8 4 W T J ,T S TG -5 5 to +1 5 0 E AS 680 Junction-to-Case Thermal Resistance R θJ C 1 .2 O C /W Junction-to Ambient Thermal Resistance R θJ A 6 2 .5 O C /W C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1) M a xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e Avalanche Energy with Single Pulse IAS=17A, VDD=80V, L=4.7mΗ TA = 2 5 OC O C mJ Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE June 03, 2010-REV.00 PAGE . 1 PJB24N10 ELECTRICAL CHARACTERISTICS P a ra m e te r ( TA=25OC unless otherwise noted ) S ymb o l Te s t C o nd i ti o n M i n. Typ . Ma x. Uni ts D r a i n- S o urc e B re a k d o wn Vo lta g e B V D SS V GS =0 V, I D =2 5 0 uA 100 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S ( o n) VGS= 10V, I D= 30A - 18.6 24 mΩ I DSS VDS=80V, VGS=0V - - 1 uA I GS S V GS =+ 2 0 V, V D S =0 V - - +1 0 0 nΑ - 6 0 .6 78 - 8 .2 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 21.4 - Turn-On D e la y Ti me t d (o n) - 18.4 26 - 9.2 12 - 56 68 f - 1 8 .8 26 - 1450 3200 - 155 200 - 110 165 Turn-On Ri s e Ti m e t Turn-Off D e la y Ti me t V D S = 5 0 V, ID =3 0 A , V GS =1 0 V VDD=50V, I D =1A V GS =1 0 V, RG=1.6Ω r d (o ff) Turn-Off F a ll Ti m e t Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C o ss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S = 5 0 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e - D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt D i o d e F o rwa rd Vo lta g e IS - - - 42 A V SD IS = 3 0 A , V GS =0 V - - 1 .3 V NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG June 03, 2010-REV.00 PAGE . 2 PJB24N10 Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) ID - Drain-to-Source Current (A) VGS=10V~7V 6.0V 80 60 40 5.0V 20 4.5V ID - Drain Source Current (A) 100 100 VDS =10V 80 60 40 TJ = 125oC -55oC 0 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 2 15 100 RDS(ON) - On Resistance(mΩ Ω) RDS(ON) - On Resistance(mΩ Ω) 50 40 30 VGS=6.5V 20 VGS = 10V 10 ID =30A 80 60 TJ =125oC 40 20 TJ =25oC 0 0 0 20 40 60 ID - Drain Current (A) 4 80 Fig.3 On Resistance vs Drain Current 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) 10 Fig.4 On Resistance vs Gate to Source Voltage 5000 2 VGS =10 V ID =30A 1.6 f = 1MHz VGS = 0V C - Capacitance (pF) RDS(ON) - On-Resistance(Normalized) 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric Fig.1 Output Characteristric 1.8 25oC 20 4000 Ciss 3000 1.4 1.2 C 2000 1 C C 1000 0.8 Coss 0.6 Crss 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature June 03, 2010-REV.00 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Fig.6 Capacitance PAGE. 3 PJB24N10 10 100 VDS=50V ID =30A 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 6 4 2 10 TJ = 125oC 1 25oC 0.1 -55oC 0.01 0 0 10 20 30 40 50 Qg - Gate Charge (nC) 60 Fig. 7 Gate Charge Waveform Vth - G-S Threshold Voltage(Normalized) VGS = 0V 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.8 Source-Drain Diode Forward Voltage 1.2 ID = 250µA 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature June 03, 2010-REV.00 PAGE. 4 PJB24N10 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. June 03, 2010-REV.00 PAGE . 5