PJSMS05 SERIES QUAD TVS/ZENER ARRAY FOR ESD AND LATCH-UP PROTECTION This Quad TVS/Zener Array family have been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 5V, 12V, 15V and 24V. This TVS array offers an integrated solution to protect up to 4 data lines where the board space is a premium. SPECIFICATION FEATURES 350W Power Dissipation (8/20µs Waveform) Low Leakage Current, Maximum of 5µA at rated voltage 1 6 Very Low Clamping Voltage 5 4 2 3 IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance Industry Standard Surface Mount Package SOT23-6L 100% Tin Matte Finish (RoHS Compliance) APPLICATIONS 1 Personal Digital Assistant (PDA) SIM Card Port Protection (Mobile Phone) SOT23-6L Portable Instrumentation Mobile Phones and Accessories TVS PJSMS05 PJSMS12 PJSMS15 PJSMS24 Memory Card Port Protection MAXIMUM RATINGS (Per Device) Marking Code M05 M12 M15 M24 Symbol Value Units Peak Pulse Power (8/20µs Waveform) P pp 350 W ESD Voltage (HBM) V ESD >25 kV Operating Temperature Range TJ -50 to +125 °C Storage Temperature Range Tstg -50 to +150 °C Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMS05 Parameter Reverse Stand-Off Voltage Conditions Symbol Min VWRM Reverse Breakdown Voltage VBR Reverse Leakage Current IR VR = 5V 5 µA Clamping Voltage (8/20µs) Vc I pp = 5A 9.8 V Clamping Voltage (8/20µs) Vc I pp = 24A 13 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 225 Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 125 5/11/2006 I BR = 1mA Page 1 6 V pF pF www.panjit.com PJSMS05 SERIES ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C PJSMS12 Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8/20µs) Vc I pp = 5A Clamping Voltage (8/20µs) Vc I pp = 15A Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Max Units 12 V 13.3 V 1 20 µA V 25 V 100 pF PJSMS15 Parameter Reverse Stand-Off Voltage Symbol Conditions Min Typical VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Off State Junction Capacitance Max Units 15 V 16.7 V 1 µA I pp = 5A 24 V Vc I pp = 12A 29 V Cj 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 80 pF PJSMS24 Parameter Reverse Stand-Off Voltage Symbol Conditions VWRM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8/20µs) Vc Clamping Voltage (8/20µs) Vc Off State Junction Capacitance 5/11/2006 Min Cj Typical Max Units 24 V 26.7 V 1 µA I pp = 5A 40 V I pp = 8A 44 0 Vdc Bias f = 1MHz Between I/O pins and pin 2, 5 Page 2 60 V pF www.panjit.com PJSMS05 SERIES TYPICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Surge Pulse Waveform Definition Non-Repetitive Peak Pulse Power vs Pulse Time 110 100 90 80 70 60 50 40 30 20 10 0 1000 50% of Ipp @ 20µs Rise time 10-90% - 8µs 0 5 10 15 20 25 30 Peak Pulse Power - Ppp (W) Percent of Ipp Pulse Waveform 100 10 1 0.1 0.01 1 10 100 1000 tim e, µsec Pulse Duration, µsec Off-State Capacitance per Device - 1MHz 200 45 40 35 30 25 20 15 10 5 0 180 PJSMS24 Capacitance, pF Clamping voltage, V Clamping Voltage vs. Peak current PJSMS15 PJSMS12 PJSMS05 PJSMS05 160 140 120 100 80 60 40 0 5 10 15 20 25 30 0 Ipp, A (8/20µsec) 5/11/2006 20 1 2 3 4 5 Bias, Vdc Page 3 www.panjit.com PJSMS05 SERIES TYPICAL APPLICATION EXAMPLE AND PACKAGE DIMENSIONS Data Line 1 Data Line 2 Data Line 3 Data Line 4 PJSMSxx Ground (Pins 2 and 5) © Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. 5/11/2006 Page 4 www.panjit.com